Toward smart and ultra‐efficient solid‐state lighting

JY Tsao, MH Crawford, ME Coltrin… - Advanced Optical …, 2014 - Wiley Online Library
Solid‐state lighting has made tremendous progress this past decade, with the potential to
make much more progress over the coming decade. In this article, the current status of solid …

[HTML][HTML] UV-based technologies for SARS-CoV2 inactivation: Status and perspectives

N Trivellin, F Piva, D Fiorimonte, M Buffolo, C De Santi… - Electronics, 2021 - mdpi.com
Severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) is the etiologic agent of
COVID-19, which has affected the international healthcare systems since the beginning of …

[HTML][HTML] Size effects of AlGaInP red vertical micro-LEDs on silicon substrate

K Fan, J Tao, Y Zhao, P Li, W Sun, L Zhu, J Lv, Y Qin… - Results in Physics, 2022 - Elsevier
To study the size effect of AlGaInP red micro-LEDs on the silicon substrate, we fabricated
five AlGaInP red micro-LEDs with different pixel sizes (160× 160, 80× 80, 40× 40, 20× 20 …

[HTML][HTML] Understanding the sidewall passivation effects in AlGaInP/GaInP micro-LED

J Park, W Baek, DM Geum, S Kim - Nanoscale research letters, 2022 - Springer
The passivation effects of sulfur treatment and Al2O3 passivation for AlGaInP/GaInP red
micro-light-emitting-diodes (LEDs) were investigated in terms of the external quantum …

Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes

HPT Nguyen, S Zhang, AT Connie, MG Kibria… - Nano …, 2013 - ACS Publications
We have examined the carrier injection process of axial nanowire light-emitting diode (LED)
structures and identified that poor carrier injection efficiency, due to the large surface …

[HTML][HTML] Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives

M Meneghini, C De Santi, A Tibaldi, M Vallone… - Journal of applied …, 2020 - pubs.aip.org
This tutorial paper focuses on the physical origin of thermal droop, ie, the decrease in the
luminescence of light-emitting diodes (LEDs) induced by increasing temperature. III-nitride …

Efficiency-droop suppression by using large-bandgap AlGaInN thin barrier layers in InGaN quantum-well light-emitting diodes

G Liu, J Zhang, CK Tan, N Tansu - IEEE Photonics Journal, 2013 - ieeexplore.ieee.org
The electrical and optical characteristics of InGaN quantum-well light-emitting diodes with
large-bandgap AlGaInN thin barriers were analyzed with the consideration of carrier …

Mitigating LED nonlinearity to enhance visible light communications

X Deng, S Mardanikorani, Y Wu… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
This paper addresses the nonlinear memory effects in the response of typical illumination
light emitting diodes (LEDs), in order to enhance the performance of visible light …

[HTML][HTML] MicroLED/LED electro-optical integration techniques for non-display applications

V Kumar, I Kymissis - Applied Physics Reviews, 2023 - pubs.aip.org
MicroLEDs offer an extraordinary combination of high luminance, high energy efficiency, low
cost, and long lifetime. These characteristics are highly desirable in various applications, but …

InGaN/GaN light-emitting diode with a polarization tunnel junction

ZH Zhang, S Tiam Tan, Z Kyaw, Y Ji, W Liu, Z Ju… - Applied Physics …, 2013 - pubs.aip.org
We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-
GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier …