Ab initio theoretical study of hydrogen and its interaction with boron acceptors and nitrogen donors in single-wall silicon carbide nanotubes
A Gali - Physical Review B—Condensed Matter and Materials …, 2007 - APS
Silicon carbide nanotubes have a great potential for biological applications. It is of interest to
explore the electronic properties of these nanotubes, and how those are modified in the …
explore the electronic properties of these nanotubes, and how those are modified in the …
Point defects in silicon carbide
N Iwamoto, BG Svensson - Semiconductors and Semimetals, 2015 - Elsevier
In this chapter, we critically review recent progress in the understanding and control of
intrinsic point defects, and hydrogen and transition metal impurities in monocrystalline …
intrinsic point defects, and hydrogen and transition metal impurities in monocrystalline …
Improvement of carrier lifetimes in highly Al-doped p-type 4H-SiC epitaxial layers by hydrogen passivation
Carrier lifetimes in a highly Al-doped p-type epilayer (NA= 1× 10 18 cm-3) are investigated
by differential microwave photoconductance decay (µ-PCD) measurements. A carrier …
by differential microwave photoconductance decay (µ-PCD) measurements. A carrier …
Impacts of hydrogen annealing on the carrier lifetimes in p-type 4H-SiC after thermal oxidation
R Zhang, R Hong, J Han, H Ting, X Li, J Cai… - Chinese …, 2023 - iopscience.iop.org
Thermal oxidation and hydrogen annealing were applied on a 100 μm thick Al-doped p-type
4H-SiC epitaxial wafer to modulate the minority carrier lifetime, which was investigated by …
4H-SiC epitaxial wafer to modulate the minority carrier lifetime, which was investigated by …
Diffusion of hydrogen in perfect, -type doped, and radiation-damaged
The diffusion of interstitial atomic hydrogen in 4 H-SiC was investigated theoretically, using
the local density approximation of density functional theory. We have found that the diffusion …
the local density approximation of density functional theory. We have found that the diffusion …
Effect of hydrogen treatment on 4H-SiC Schottky barrier diodes
Z Chen, L Liu, Y Sun, G Li, S Yan, Y Xiao… - Physica …, 2024 - iopscience.iop.org
In this letter, 4H-SiC Schottky barrier diodes (SBDs) with Ti Schottky metal have been
subjected to hydrogen treatment in a confined environment of 4% H 2 and 96% N 2 at 150 …
subjected to hydrogen treatment in a confined environment of 4% H 2 and 96% N 2 at 150 …
Deep level transient spectroscopy study of defects in hydrogen implanted p-type 4H‐SiC
p-type 4 H‐Si C epitaxial layers grown by chemical vapor deposition have been implanted
with 200 and 100 keV protons at five different implantation temperatures. An isochronal …
with 200 and 100 keV protons at five different implantation temperatures. An isochronal …
Hydrogen in the wide bandgap semiconductor silicon carbide
In this paper we give a review of our recent results related to the incorporation of hydrogen
(H) in silicon carbide (SiC) and its interaction with acceptor doping atoms and implantation …
(H) in silicon carbide (SiC) and its interaction with acceptor doping atoms and implantation …
Oxygen passivation and reactivation of interface states introduced during Schottky diode fabrication on bulk n-type 6H–SiC
E Van Wyk, AWR Leitch - Applied surface science, 2004 - Elsevier
Typical and deviant Au or Au–Ge Schottky diodes fabricated via thermal (resistive)
metallization on bulk 6H–SiC are boiled in 17.8 MΩ deionized water. Boiling of the typical …
metallization on bulk 6H–SiC are boiled in 17.8 MΩ deionized water. Boiling of the typical …
Evidence for a hydrogen-related defect in implanted p-type 4H-SiC
Abstract 200 keV hydrogen implantation was performed in order to investigate the formation
of electrically active hydrogen-related defects in Al-doped 4H-SiC epitaxial layers. Samples …
of electrically active hydrogen-related defects in Al-doped 4H-SiC epitaxial layers. Samples …