A 24–29.5-GHz highly linear phased-array transceiver front-end in 65-nm CMOS supporting 800-MHz 64-QAM and 400-MHz 256-QAM for 5G new radio
Y Yi, D Zhao, J Zhang, P Gu, Y Chai… - IEEE Journal of Solid …, 2022 - ieeexplore.ieee.org
This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-
wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and …
wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and …
A wideband class-AB power amplifier with 29–57-GHz AM–PM compensation in 0.9-V 28-nm bulk CMOS
M Vigilante, P Reynaert - IEEE Journal of Solid-State Circuits, 2017 - ieeexplore.ieee.org
A wideband amplitude to phase (AM-PM) compensated class-AB power amplifier (PA)
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
suitable for highly integrated fifth-generation phased arrays is designed in 0.9-V 28-nm …
Highly linear mm-wave CMOS power amplifier
A Ka-band highly linear power amplifier (PA) is implemented in 28-nm bulk CMOS
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …
Power amplifiers for mm-wave 5G applications: Technology comparisons and CMOS-SOI demonstration circuits
A review is presented of key power amplifier (PA) performance requirements for millimeter-
wave 5G systems, along with a comparison of the potential of different semiconductor …
wave 5G systems, along with a comparison of the potential of different semiconductor …
Fully integrated CMOS power amplifier with efficiency enhancement at power back-off
G Liu, P Haldi, TJK Liu… - IEEE Journal of Solid …, 2008 - ieeexplore.ieee.org
This paper presents a new approach for power amplifier design using deep submicron
CMOS technologies. A transformer based voltage combiner is proposed to combine power …
CMOS technologies. A transformer based voltage combiner is proposed to combine power …
Balanced-to-Doherty mode-reconfigurable power amplifier with high efficiency and linearity against load mismatch
A balanced-to-Doherty (B2D) mode-reconfigurable power amplifier (PA) is presented in this
article, which is endowed with a unique capability of maintaining high linearity and high …
article, which is endowed with a unique capability of maintaining high linearity and high …
Transformer-based uneven Doherty power amplifier in 90 nm CMOS for WLAN applications
E Kaymaksut, P Reynaert - IEEE Journal of Solid-State Circuits, 2012 - ieeexplore.ieee.org
This paper presents a fully integrated transformer-based Doherty power amplifier in a
standard 90 nm CMOS process. A novel asymmetrical series combining transformer is used …
standard 90 nm CMOS process. A novel asymmetrical series combining transformer is used …
Optimization for envelope shaped operation of envelope tracking power amplifier
This paper describes the analysis of an optimized envelope shaping function for the
envelope tracking power amplifier (ET PA) and its implementation. The proposed shaping …
envelope tracking power amplifier (ET PA) and its implementation. The proposed shaping …
AM/AM and AM/PM distortion generation mechanisms in Si LDMOS and GaN HEMT based RF power amplifiers
This paper provides a comprehensive analysis of the AM/AM and AM/PM nonlinear
distortion generation mechanisms arising in the most common RF power amplifier (PA) …
distortion generation mechanisms arising in the most common RF power amplifier (PA) …
Integrated bias circuits of RF CMOS cascode power amplifier for linearity enhancement
B Koo, Y Na, S Hong - IEEE Transactions on Microwave Theory …, 2012 - ieeexplore.ieee.org
This paper presents a highly linear differential cascode CMOS power amplifier (PA) with
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …
gate bias circuits in Common Source (CS) and Common Gate (CG) amplifiers. The proposed …