Electrochemical behaviors of Janus Green B in through-hole copper electroplating: An insight by experiment and density functional theory calculation using Safranine …

C Wang, J Zhang, P Yang, M An - Electrochimica Acta, 2013 - Elsevier
Janus Green B (JGB) and Safranine T (ST) were used as levelers in the through-hole (TH)
copper electroplating experiments. Although JGB and ST have a similar part in the structure …

A comparison of typical additives for copper electroplating based on theoretical computation

Z Lai, S Wang, C Wang, Y Hong, G Zhou… - Computational Materials …, 2018 - Elsevier
Electronic parameters of four additives for copper electroplating including accelerators,
mercaptopropane sulfonic acid (MPS) and bis-(acid-sulfopropyl)-disulfide (SPS), inhibitor …

Synthesis of quaternary ammonium salts based on diketopyrrolopyrroles skeletons and their applications in copper electroplating

B Chen, J Xu, L Wang, L Song… - ACS applied materials & …, 2017 - ACS Publications
A series of DPP derivatives bearing quaternary ammonium salt centers with different lengths
of carbon chains have been designed and synthesized. Their inhibition actions on copper …

Accelerator screening by cyclic voltammetry for microvia filling by copper electroplating

YD Chiu, WP Dow - Journal of The Electrochemical Society, 2013 - iopscience.iop.org
A cyclic voltammetry (CV) screening method is proposed in this work to identify an effective
accelerator for the copper superfilling of microvias of a printed circuit board (PCB). Five …

3-Mercapto-1-propanesulfonate for Cu electrodeposition studied by in situ shell-isolated nanoparticle-enhanced Raman spectroscopy, density functional theory …

KG Schmitt, R Schmidt, HF Von-Horsten… - The Journal of …, 2015 - ACS Publications
We investigate the mechanism of 3-mercapto-1-propanesulfonate (MPS) acceleration of Cu
electrodeposition in the presence of Cl–through comparison with the inactive but related …

Numerical simulation and experimental verification of additive distribution in through-silicon via during copper filling process

Y Zhang, G Ding, P Cheng… - Journal of The …, 2014 - iopscience.iop.org
Numerical model was built based on a set of PDEs and the curvature-enhanced accelerator
coverage (CEAC) mechanism. Arbitrary Lagrange-Eulerian (ALE) method was used to track …

Effect of external factors on copper filling in 3D integrated through-silicon-vias (TSVs)

Y Zhang, G Ding, H Wang… - Journal of the …, 2015 - iopscience.iop.org
Except for the internal factors such as properties of additives, adsorption or desorption
mechanism, the external factors such as forced convection and environment temperature …

Effects of DPS on surface roughness and mechanical properties of electrodeposited copper foils

R Zhang, S Yang, S Qin, P Wang… - Crystal Research …, 2023 - Wiley Online Library
The roughness and mechanical properties of ultra‐low profile electrolytic copper foil
seriously affect and restrict its application in high‐frequency/high‐speed printed circuit …

Characterization of through-hole filling by copper electroplating using a tetrazolium salt inhibitor

GY Lin, JJ Yan, MY Yen, WP Dow… - Journal of The …, 2013 - iopscience.iop.org
Through-hole (TH) filling of an advanced printed circuit board (PCB) by copper
electroplating is performed using a direct current (DC) plating method and a simple copper …

Polyquaternium-2: a new levelling agent for copper electroplating from acidic sulphate bath

B Chen, A Wang, S Wu, L Wang - Electrochemistry, 2016 - jstage.jst.go.jp
Copper (Cu) electrodeposition from acidic solutions has been used extensively by the
microelectronic industry for interconnection in both Print Circuit Board (PCB) and integrated …