Measurement and analysis of photoluminescence in GaN

MA Reshchikov - Journal of applied physics, 2021 - pubs.aip.org
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …

Carrier dynamics in bulk GaN

P Šcˇajev, K Jarašiūnas, S Okur, Ü Özgür… - Journal of Applied …, 2012 - pubs.aip.org
Carrier dynamics in hydride vapor phase epitaxy grown bulk GaN with very low density of
dislocations, 5–8× 10 5 cm− 2, have been investigated by time-resolved photoluminescence …

A carrier density dependent diffusion coefficient, recombination rate and diffusion length in MAPbI 3 and MAPbBr 3 crystals measured under one-and two-photon …

P Ščajev, S Miasojedovas, S Juršėnas - Journal of Materials Chemistry …, 2020 - pubs.rsc.org
Applications of lead halide perovskites in solar cells and photo-and ionising radiation
detectors are based on effective charge carrier generation and transport. The perovskites …

[HTML][HTML] Excitation-dependent carrier lifetime and diffusion length in bulk CdTe determined by time-resolved optical pump-probe techniques

P Ščajev, S Miasojedovas, A Mekys… - Journal of Applied …, 2018 - pubs.aip.org
We applied time-resolved pump-probe spectroscopy based on free carrier absorption and
light diffraction on a transient grating for direct measurements of the carrier lifetime and …

Two regimes of carrier diffusion in vapor-deposited lead-halide perovskites

P Scajev, R Aleksiejunas, S Miasojedovas… - The Journal of …, 2017 - ACS Publications
Metal halide perovskites are attractive materials for the realization of cheap and effective
solar cells, thin film transistors, and light emitters. Carrier diffusion at high excitations …

Dot-matrix hologram rendering algorithm and its validation through direct laser interference patterning

T Tamulevičius, M Juodėnas, T Klinavičius… - Scientific reports, 2018 - nature.com
The fight against forgery of valuable items demands efficient and reasonably priced
solutions. A security tag featuring holographic elements for anti-counterfeiting is one of them …

Out of focus ultrafast processing of metals for reduced secondary electron yield

R Uren, A Din, S Wackerow, E Bez, S Pfeiffer… - Optical Materials …, 2023 - opg.optica.org
We have demonstrated out-of-focus ultrafast pulsed laser processing of copper with a
variable working distance, without the need for mechanical movement. This was achieved …

Temperature-and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC

P Ščajev, K Jarašiūnas - Journal of Physics D: Applied Physics, 2013 - iopscience.iop.org
Time-resolved optical'pump-probe'techniques were applied to monitor carrier dynamics in
CVD-grown 4H-SiC for investigation of carrier diffusivity and recombination rate over a wide …

Impact of Alloy-Disorder-Induced Localization on Hole Diffusion in Highly Excited -Plane and -Plane (,) Quantum Wells

R Aleksiejūnas, K Nomeika, O Kravcov, S Nargelas… - Physical Review …, 2020 - APS
The diffusion coefficient of holes can provide knowledge about carrier localization in (In, Ga)
N, where the carrier dynamics are altered by randomly fluctuating potential landscape. In …

Nonequilibrium carrier dynamics in bulk HPHT diamond at two‐photon carrier generation

P Ščajev, V Gudelis, E Ivakin… - physica status solidi …, 2011 - Wiley Online Library
We demonstrate applicability of time‐resolved free‐carrier absorption and transient grating
techniques for investigation of carrier recombination and diffusion features in a bulk …