Tunable electronic trap energy in sol-gel processed dielectrics
We demonstrate the electronic trap energy distribution (ΔE IL) in the wide bandgap,
nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution …
nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution …
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
Positive charges (PCs) in gate dielectric shift the threshold voltage and cause a time-
dependent device variability. To assess their impact on circuits, it is useful to know their …
dependent device variability. To assess their impact on circuits, it is useful to know their …
Repetitive-avalanche-induced electrical parameters shift for 4H-SiC junction barrier Schottky diode
The electrical parameters shift of 4H-SiC junction barrier Schottky diode under the repetitive
avalanche current stress has been experimentally investigated. Using technical computer …
avalanche current stress has been experimentally investigated. Using technical computer …
Applying Complementary Trap Characterization Technique to Crystalline -Phase- for Improved Understanding of Nonvolatile Memory Operation and Reliability
MB Zahid, DR Aguado, R Degraeve… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
The operation and reliability of nonvolatile memory concepts based on charge storage in
nitride layers, such as TANOS (TaN/Al_2O_3/Si_3N_4/SiO_2/Si), require detailed …
nitride layers, such as TANOS (TaN/Al_2O_3/Si_3N_4/SiO_2/Si), require detailed …
Energy and Spatial Distributions of Electron Traps Throughout Stacks as the IPD in Flash Memory Application
XF Zheng, WD Zhang, B Govoreanu… - … on Electron Devices, 2009 - ieeexplore.ieee.org
SiO 2/high-¿ dielectric stacks will soon replace the conventional SiO 2-based dielectric
stacks in flash memory cells, as the thickness of SiO 2-based stacks is approaching its …
stacks in flash memory cells, as the thickness of SiO 2-based stacks is approaching its …
A New Multipulse Technique for Probing Electron Trap Energy Distribution in High- Materials for Flash Memory Application
XF Zheng, WD Zhang, B Govoreanu… - IEEE transactions on …, 2010 - ieeexplore.ieee.org
A new discharge-based multipulse technique has been developed in this paper, which
overcomes the shortcomings of the existing techniques, such as the charge pumping …
overcomes the shortcomings of the existing techniques, such as the charge pumping …
New insights into defect loss, slowdown, and device lifetime enhancement
Defects in gate oxide cause breakdown and shorten device lifetime. Early works mainly
focused on generation process that converts a precursor into a charged defect. Although it …
focused on generation process that converts a precursor into a charged defect. Although it …
Real-time and on-site γ-ray radiation response testing system for semiconductor devices and its applications
The construction of a turnkey real-time and on-site radiation response testing system for
semiconductor devices is reported. Components of an on-site radiation response probe …
semiconductor devices is reported. Components of an on-site radiation response probe …
Total ionizing dose response of hafnium-oxide based MOS devices to low-dose-rate gamma ray radiation observed by pulse CV and on-site measurements
This paper reports on the low-dose-rate radiation response of Al-HfO 2/SiO 2-Si MOS
devices, where the gate dielectric was formed by atomic layer deposition with 4.7 nm …
devices, where the gate dielectric was formed by atomic layer deposition with 4.7 nm …
A Novel Trapping/Detrapping Model for Defect Profiling in High- Materials Using the Two-Pulse Capacitance–Voltage Technique
DR Aguado, B Govoreanu, WD Zhang… - … on Electron Devices, 2010 - ieeexplore.ieee.org
The continuous reduction of the dimensions of floating-gate-based nonvolatile memories
brings the necessity of substituting the current dielectrics with materials of higher dielectric …
brings the necessity of substituting the current dielectrics with materials of higher dielectric …