Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage
Realizing transparent and energy-dense supercapacitor is highly challenging, as there is a
trade-off between energy storing capability and transparency in the active material film. We …
trade-off between energy storing capability and transparency in the active material film. We …
Tailoring SnO2 Defect States and Structure: Reviewing Bottom-Up Approaches to Control Size, Morphology, Electronic and Electrochemical Properties for Application …
Tin oxide (SnO2) is a versatile n-type semiconductor with a wide bandgap of 3.6 eV that
varies as a function of its polymorph, ie, rutile, cubic or orthorhombic. In this review, we …
varies as a function of its polymorph, ie, rutile, cubic or orthorhombic. In this review, we …
Recent advances in copper sulfide nanoparticles for phototherapy of bacterial infections and cancer
Copper sulfide nanoparticles (CuS NPs) have attracted growing interest in biomedical
research due to their remarkable properties, such as their high photothermal and …
research due to their remarkable properties, such as their high photothermal and …
Selectively enhanced UV and NIR photoluminescence from a degenerate ZnO nanorod array film
Energy band engineering is a promising method to tune the photoelectric properties of
semiconductors. In this paper, we report an un-element-doped ZnO nanorod array film with a …
semiconductors. In this paper, we report an un-element-doped ZnO nanorod array film with a …
Control of plasmonic and interband transitions in colloidal indium nitride nanocrystals
We have developed a colloidal synthesis of 4–10 nm diameter indium nitride (InN)
nanocrystals that exhibit both a visible absorption onset (∼ 1.8 eV) and a strong localized …
nanocrystals that exhibit both a visible absorption onset (∼ 1.8 eV) and a strong localized …
Effect of La doping on key characteristics of SnO2 thin films facilely fabricated by spin coating technique
La-doped SnO 2 thin films (1, 2.5, 5.0, 7.5 and 10%) have been coated on FTO substrates by
a sol-gel spin coating technique. XRD studies confirms the (100) orientation of all prepared …
a sol-gel spin coating technique. XRD studies confirms the (100) orientation of all prepared …
Impact of boron and indium doping on the structural, electronic and optical properties of SnO2
Abstract Tin dioxide (SnO2), due to its non-toxicity, high stability and electron transport
capability represents one of the most utilized metal oxides for many optoelectronic devices …
capability represents one of the most utilized metal oxides for many optoelectronic devices …
Bandgap investigations and the effect of the In and Al concentration on the optical properties of InxAl1−xN
Optical properties of In_xAl_1− xN are calculated as a function of the concentration of indium
and aluminum. Aluminum is partially replaced by indium in an AlN sample, and optical …
and aluminum. Aluminum is partially replaced by indium in an AlN sample, and optical …
The nature of nitrogen related point defects in common forms of InN
KSA Butcher, AJ Fernandes, PPT Chen… - Journal of applied …, 2007 - pubs.aip.org
The role of point defects related to the presence of excess nitrogen is elucidated for InN thin
films grown by different techniques. Elastic recoil detection analysis has shown the presence …
films grown by different techniques. Elastic recoil detection analysis has shown the presence …
Conversion of direct to indirect bandgap and optical response of B substituted InN for novel optical devices applications
Optical properties of B _\rmx In _1-\rmx N are calculated as a function of the varying
concentration of Boron and Indium. Indium is gradually replaced by Boron and optical …
concentration of Boron and Indium. Indium is gradually replaced by Boron and optical …