Variability in resistive memories

JB Roldán, E Miranda, D Maldonado… - Advanced Intelligent …, 2023 - Wiley Online Library
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …

Memristive crossbar arrays for storage and computing applications

H Li, S Wang, X Zhang, W Wang… - Advanced Intelligent …, 2021 - Wiley Online Library
The emergence of memristors with potential applications in data storage and artificial
intelligence has attracted wide attentions. Memristors are assembled in crossbar arrays with …

The future of electronics based on memristive systems

MA Zidan, JP Strachan, WD Lu - Nature electronics, 2018 - nature.com
A memristor is a resistive device with an inherent memory. The theoretical concept of a
memristor was connected to physically measured devices in 2008 and since then there has …

[HTML][HTML] Resistive switching phenomena: A review of statistical physics approaches

JS Lee, S Lee, TW Noh - Applied Physics Reviews, 2015 - pubs.aip.org
Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

Anatomy of Ag/Hafnia-based selectors with 10 10 nonlinearity

R Midya, Z Wang, J Zhang, SE Savel'ev, C Li, M Rao… - Advanced Materials, 2017 - osti.gov
We developed a novel Ag/oxide-based threshold switching device with attractive features
including≈ 1010 nonlinearity. Furthermore, in a high-resolution transmission electron …

Threshold switching of Ag or Cu in dielectrics: materials, mechanism, and applications

Z Wang, M Rao, R Midya, S Joshi… - Advanced Functional …, 2018 - Wiley Online Library
Threshold switches with Ag or Cu active metal species are volatile memristors (also termed
diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal …

A highly CMOS compatible hafnia-based ferroelectric diode

Q Luo, Y Cheng, J Yang, R Cao, H Ma, Y Yang… - Nature …, 2020 - nature.com
Memory devices with high speed and high density are highly desired to address the
'memory wall'issue. Here we demonstrated a highly scalable, three-dimensional stackable …

The challenges of modern computing and new opportunities for optics

C Li, X Zhang, J Li, T Fang, X Dong - PhotoniX, 2021 - Springer
In recent years, the explosive development of artificial intelligence implementing by artificial
neural networks (ANNs) creates inconceivable demands for computing hardware. However …

Compact modeling of RRAM devices and its applications in 1T1R and 1S1R array design

PY Chen, S Yu - IEEE Transactions on Electron Devices, 2015 - ieeexplore.ieee.org
In this paper, we present a compact model for metal-oxide-based resistive random access
memory (RRAM) devices with bipolar switching characteristics. The switching mechanism …

Schottky barrier control of self-polarization for a colossal ferroelectric resistive switching

B Huang, X Zhao, X Li, L Li, Z Xie, D Wang, D Feng… - ACS …, 2023 - ACS Publications
Controlling the domain evolution is critical both for optimizing ferroelectric properties and for
designing functional electronic devices. Here we report an approach of using the Schottky …