Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

In the experiments on the etched surface of gallium arsenide were performed. We studied
the effect of BCl 3 gas flow rate on the thickness of the etched layer. GaAs etching rate was …

The paper presents the experimental results of the combination of AFM lithography and
plasma chemical etching the surface of the gallium arsenide samples. Results dilution and …

In this paper, experimental studies were carried out on the formation of a microrelief on the
surface of gallium arsenide substrates. The surface was modified by the method of plasma …

In this paper, for the first time, we report a strong effect of the arsenic pressure used for the
high-rate GaAs capping of self-assembled InAs quantum dots on their optical properties. A …

We give an overview of semiconductor structures that confine charge carriers on a length
scale comparable to their de Broglie wavelength, comment on the production and the device …

The influence of the conditions during growth of InAs/GaAs quantum-dot structures on GaAs
(001) by molecular-beam epitaxy was investigated systematically with respect to achieving …

We investigate the effects of combining growth interruption (GI) and InGaAs strain reducing
matrix at low In content on the optical properties of Stanski–Krastanow InAs QDs grown by …

We have investigated the effect of post-growth rapid thermal annealing on the low-
temperature photoluminescence (PL) spectra of self-assembled InAs quantum dots (QDs) …

The influence of digital alloy capping technique on the strain-coupled bilayer InAs quantum
dots (QDs) has been presented. Multiple capping layers of different composition have been …