Methods for manufacturing silicon carbide wafers having superior specifications for bow,
warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least …

Inline metrology tools are widely used to detect defects in SiC epitaxial layers. The defect
statistics are used in a variety of ways to determine quality, pass/fail and screen affected die …

HOIL 2/76(2006.01) HOIL 2L/20(2006.01)(57) ABSTRACT HOIL 21/02(2006.01) A method
of forming an epitaxial SiC film on SiC substrates HOIL 2L/365(2006.01) in a warm wall CVD …

A method for producing silicon carbide substrates fit for epitaxial growth in a standard
epitaxial chamber normally used for silicon wafers processing. Strict limitations are placed …

(57) ABSTRACT A method of forming an SiC crystal, the method including: placing a Sic
seed in a growth vessel, heating the growth vessel, and evacuating the growth vessel …

A method of forming an SiC crystal including placing in an insulated graphite container a
seed crystal of SiC, and supporting the seed crystal on a shelf, wherein cushion rings …

The reliability of the gate oxide on large-area surface defects (trapezoid-shaped and obtuse
triangular defects) in 4H-SiC epitaxial wafers is discussed. Time-dependent dielectric …

We investigate the triangular defects with different structural features on 4H-SiC epilayers by
a Nomarski microscope, a Candela optical surface analyzer and ultraviolet …

Abstract 4H SiC epiwafers with thickness of 50-100 μm are grown on 4 off-axis substrates.
Surface morphological defect density in the range of 2-6 cm− 2 is obtained from inspection …

Methods for manufacturing silicon carbide wafers having superior specifications for bow,
warp, total thickness variation (TTV), local thickness variation (LTV), and site front side least …