Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …

In the last three decades, study has seen the evolution of metal oxide semiconductor (MOS)
devices as device geometries have shrunk in line with Moore's law. This device shrunk …

Hafnia–zirconia (HfO2–ZrO2) solid solution thin films have emerged as viable candidates for
electronic applications due to their compatibility with Si technology and demonstrated …

This paper presents the area-selective wet etching (ASWE) method as a novel approach to
have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film …

We used magnetron sputtering to prepare high emissive HfO 2 thin films with thickness 300–
500 nm under different O 2 flux. A dense uniform HfO 2 thin film with a polycrystalline …

The wake-up effect is a major issue for ferroelectric HfO2-based memory devices. Here, two
TiN/HZO/TiN structures deposited by magnetron sputtering on silicon are compared. The …

The growth behavior of pure and Sr included HfO2 composite thin films for different
concentrations of Sr (5, 10, and 15 Wt%) through the Jet Nebulizer Spray Pyrolysis …

The room temperature deposition of 10 nm-thick ferroelectric hafnium/zirconium oxide,(Hf,
Zr) O 2⁠, thin solid films is achieved with a single hafnium/zirconium, Hf/Zr, alloy target by …

The present work focuses on the study of properties of hafnium oxide (HfO 2) films,
deposited by reactive magnetron sputtering of the Hf target in Ar/O 2 gas mixture. The X-ray …

An array of titanium (Ti) doped HfO 2 [(Hf 1-x Ti x O 2)(x= 0.0–1.0)] nanoparticles (NPs)
synthesis and the study of their structural, spectroscopic, and dielectric properties is …