CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

This paper aims at reviewing the state-of-the art of Ge pMOSFETs for future high-
performance CMOS devices. Key in the development is the integration of a Ge channel on a …

Berberine (BBR) is a renowned natural compound that exhibits potent neuroprotective
activities. However, the cellular and molecular mechanisms are still unclear. Hormesis is an …

We report low resistance Ohmic contacts on n-Ge using a thin ZnO interfacial layer (IL)
capped with Ti. A 350 C post metallization anneal is used to create oxygen vacancies that …

A low temperature nickel process has been developed that produces Ohmic contacts to n-
type germanium with specific contact resistivities down to (2.3±1.8)× 10− 7 Ω-cm 2 for …

Germanium (Ge) is a promising semiconductor as an alternative channel material to
enhance performance in scaled silicon (Si) field-effect transistor (FET) devices. The gate …

The Ge-based photovoltaic laser-power converters (LPCs) for wireless IR energy delivery
approach with a wavelength of λ= 1550 nm are studied and developed. It is shown that the …

Transition metal compounds showing a metal-insulator transition (MIT) show complex
behavior due to strongly correlated electron effects and offer attractive properties for nano …

The element metal/germanium (Ge) interface exhibits a strong Fermi level pinning (FLP),
which is usually characterized on the basis of Ge side semiconductor properties. In this …

The impact of varying interfacial layer (IL) doping on the performance of Ti/IL/n-Ge contacts
is demonstrated using undoped ZnO, aluminum-doped ZnO (AZO), and O-vacancy-doped …