Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
A Toriumi, T Nishimura - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …
expected. This size scaling will end sooner or later, however, because the typical size is …
7-nm FinFET CMOS design enabled by stress engineering using Si, Ge, and Sn
S Gupta, V Moroz, L Smith, Q Lu… - IEEE transactions on …, 2014 - ieeexplore.ieee.org
Bandgap and stress engineering using group IV materials-Si, Ge, and Sn, and their alloys
are employed to design a FinFET-based CMOS solution for the 7-nm technology node and …
are employed to design a FinFET-based CMOS solution for the 7-nm technology node and …
Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing
We report on the characterization of high Sn-content (∼ 10% Sn) GeSn films grown on (001)
Ge/Si substrates using reduced-pressure chemical vapor deposition. Pseudomorphic 30nm …
Ge/Si substrates using reduced-pressure chemical vapor deposition. Pseudomorphic 30nm …
GeSn lateral pin photodetector on insulating substrate
We report the first experimental demonstration of germanium-tin (GeSn) lateral pin
photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by …
photodetector on a novel GeSn-on-insulator (GeSnOI) substrate. The GeSnOI is formed by …
High-k Gate Stacks on Low Bandgap Tensile Strained Ge and GeSn Alloys for Field-Effect Transistors
S Wirths, D Stange, MA Pampillón… - … applied materials & …, 2015 - ACS Publications
We present the epitaxial growth of Ge and Ge0. 94Sn0. 06 layers with 1.4% and 0.4%
tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn …
tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn …
Low temperature growth of high crystallinity GeSn on amorphous layers for advanced optoelectronics
High crystallinity GeSn substitutional alloy thin films with up to 8.7 at.% Sn are directly grown
on amorphous SiO_2 layers at low crystallization temperatures of 370~ 470° C for potential …
on amorphous SiO_2 layers at low crystallization temperatures of 370~ 470° C for potential …
Fabrication, characterization, and analysis of Ge/GeSn heterojunction p-type tunnel transistors
C Schulte-Braucks, R Pandey… - … on Electron Devices, 2017 - ieeexplore.ieee.org
We present a detailed study on fabrication and characterization of Ge/GeSn heterojunction p-
type tunnel-field-effect-transistors (TFETs). Critical process modules as high-k stack and pin …
type tunnel-field-effect-transistors (TFETs). Critical process modules as high-k stack and pin …
Process modules for GeSn nanoelectronics with high Sn-contents
C Schulte-Braucks, S Glass, E Hofmann, D Stange… - Solid-State …, 2017 - Elsevier
This paper systematically studies GeSn n-FETs, from individual process modules to a
complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are …
complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are …