Monolithically Integrated Enhancement-Mode and Depletion-Mode β-Ga2O3 MESFETs with Graphene-Gate Architectures and Their Logic Applications
J Kim, J Kim - ACS applied materials & interfaces, 2020 - ACS Publications
Ultrawide band gap (UWBG) β-Ga2O3 is a promising material for next-generation power
electronic devices. An enhancement-mode (E-mode) device is essential for designing power …
electronic devices. An enhancement-mode (E-mode) device is essential for designing power …
Reconfigurable Si field-effect transistors with symmetric on-states enabling adaptive complementary and combinational logic
L Wind, A Fuchsberger, Ö Demirkiran… - … on Electron Devices, 2024 - ieeexplore.ieee.org
Reconfigurable field-effect transistors (RFETs), combining n-and p-type operation in a single
device, have already shown promising simulation results for enhancing performance and …
device, have already shown promising simulation results for enhancing performance and …
Reconfigurable NanoFETs: Performance projections for multiple-top-gate architectures
R Moura, N Tiencken, S Mothes… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
In nanowire or nanotube field-effect transistors (nanoFETs) electrostatic doping can be
induced by electrical fields originating from multiple independent gates. Therefore …
induced by electrical fields originating from multiple independent gates. Therefore …
Compact IV model for ambipolar field-effect transistors with 2D transition metal dichalcogenide as semiconductor
L Deng, J Li, Q Liu, H Huang, J Wang… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
In this work, a compact current-voltage (IV) model is proposed for 2-dimensional transition
metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge …
metal dichalcogenides (TMDs) ambipolar field-effect transistors (ambipolar FETs). Charge …
Seven Strategies to Suppress the Ambipolar Behaviour in CNTFETs: a Review
P Reena Monica - Silicon, 2022 - Springer
Ambipolar behaviour is the cloud that surrounds the desired nanoelectronics device, the
carbon nanotube field effect transistor (CNTFET). Despite all the advancements in the …
carbon nanotube field effect transistor (CNTFET). Despite all the advancements in the …
[PDF][PDF] Determination of key device parameters for short-and long-channel Schottky-type carbon nanotube field-effect transistors
AU Pacheco-Sánchez - 2019 - core.ac.uk
The Schottky barrier, contact resistance and carrier mobility in carbon nanotube (CNT) field-
effect transistors (FETs) are discussed in detail in this thesis. Novel extraction methods and …
effect transistors (FETs) are discussed in detail in this thesis. Novel extraction methods and …
Device and Transistor Level Circuit Performance Analysis of Nanoscale Mosfet
CY Ooi - 2019 - eprints.utar.edu.my
When nano-MOSFET structural dimension is downscaled to nanometer regime, quantum
effects become obvious. This small channel length nano-MOSFET reduces electron transit …
effects become obvious. This small channel length nano-MOSFET reduces electron transit …
Análise comparativa de nanoFETs reconfiguráveis
RS Moura - 2019 - icts.unb.br
Em transistores de efeito de campo baseados em nanomateriais (nanoFETs), a dopagem
eletrostática pode ser induzida por campos elétricos originados de múltiplas portas …
eletrostática pode ser induzida por campos elétricos originados de múltiplas portas …