The surface properties of carbon materials are very important since many complex physical
and chemical reactions take place on their surfaces. X-ray photoelectron spectroscopy …

To avoid the interfacial thermal stress problem caused by high temperature, room
temperature bonding techniques such as surface-activated bonding (SAB) are currently …

SiC is widely used in power electronics and high-temperature devices due to its
comprehensive physicochemical properties, including high thermal stability, mechanical …

Surface-active bonding (SAB) is a promising technique for semiconductors directly bonding.
However, the interlayer of the bonding interface and the reduced layer thickness may affect …

Low-temperature direct bonding is an effective method for joining two dissimilar materials
into one composite. In this paper, we developed a universal method for fabricating single …

Single-crystalline silicon carbide is an attractive material for power electronics. However, it is
difficult to achieve the direct bonding of SiC to conventional Si-based materials (eg, Si, SiO …

N-polar Gallium nitride (GaN) technology is one of the most important technical routes for
millimeter-wave devices. This paper introduces a new approach based on reverse epitaxial …

In this study, a de-bondable wafer bonding method for silicon carbide (SiC) that can sustain
rapid thermal annealing (RTA) at∼ 1273 K has been realized. Two SiC wafers were bonded …

Transforming potent greenhouse gasses, hydrofluorocarbons (HFCs) to hydrofluoroolefins
(HFOs) is an environmentally friendly and low energy input route compared with traditional …

Silicon carbide (SiC) is a promising material with excellent chemical and physical
performance under irradiation for advanced nuclear applications. The addition of …