2-D-Nonlinear electrothermal model for investigating the self-heating effect in GAAFET transistors

M Belkhiria, F Echouchene, N Jaba… - … on Electron Devices, 2021 - ieeexplore.ieee.org
The objective of the present study is to analyze the heat transfer in the gate-all-around (GAA)
MOSFETs based on the Cattaneo and Vernotte (CV) model due to the finite heat …

Impact of High-k Gate Dielectric on Self-Heating Effects in PiFETs Structure

M Belkhiria, F Echouchene, N Jaba… - … on Electron Devices, 2020 - ieeexplore.ieee.org
In this article, we propose a 2-D study for investigating the self-heating effect in new partially
insulated field-effect transistors (PiFETs) based on high-k gate dielectrics. The thermal …

Nonlinear electrothermal model for investigation of heat transfer process in a 22-nm FD-SOI MOSFET

F Nasri, MFB Aissa… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, thermal stability and phonon transport of 22-nm fully depleted silicon on
insulator (FD-SOI) MOSFET is investigated. On the one hand, we havedemonstrated that the …

3D thermal conduction in a nanoscale Tri-Gate MOSFET based on single-phase-lag model

F Nasri, MFB Aissa, MH Gazzah… - Applied Thermal …, 2015 - Elsevier
With the introduction of the new silicon on insulator (SOI)-Tri-Gate MOSFET technologies, it
is very necessary to simulate the thermal performance in these nano devices. We have to …

Microscale thermal conduction based on Cattaneo-Vernotte model in silicon on insulator and Double Gate MOSFETs

F Nasri, MFB Aissa, H Belmabrouk - Applied Thermal Engineering, 2015 - Elsevier
We study heat transfer process in a 10 nm Metal-Oxide-Semiconductor Field Effect
Transistor (MOSFET) based on Silicon on Insulator (SOI) and Double Gate (DG). In this …

Investigation on thermo-mechanical responses in high power multi-finger AlGaN/GaN HEMTs

R Zhang, WS Zhao, WY Yin - Microelectronics Reliability, 2014 - Elsevier
Both transient temperature and thermal stress responses in high power multi-finger
AlGaN/GaN high electron mobility transistors (HEMTs), caused by their self-heating effects …

Nano-heat transfer in GAAFET transistor using single-phase-lag model

M Belkhiria, F Echouchene, N Jaba - … (A3M'2021), March 25-27, 2021, 2022 - Springer
Due to the progress of devices miniaturization combined with the increase in packing
density in integrated circuits, modern transistors, such as Gate All Around Field Effect …

Nanoscale heat transfer in MOSFET transistor with high-k dielectrics using a non linear DPL heat conduction model

M Belkhiria, F Echouchene… - 2018 9th International …, 2018 - ieeexplore.ieee.org
In the present work, a one dimensional numerical study of nanoheat transfer in Metal/Oxide/
Semiconductor/Field Effect Transistors (MOSFET) structures has been investigated. Several …

Check for updates Nano-heat Transfer in GAAFET Transistor Using Single-Phase-Lag Model

M Belkhiria, F Echouchene, N Jaba - Advances in Materials …, 2021 - books.google.com
Due to the progress of devices miniaturization combined with the increase in packing
density in integrated circuits, modern transistors, such as Gate All Around Field Effect …

An Experimental Study of Block-Oxide Source/Drain-Tied Polycrystalline-Silicon Thin-Film Transistors With Additional Polycrystalline-Silicon Body

JT Lin, YC Eng, YH Fan - IEEE transactions on electron devices, 2012 - ieeexplore.ieee.org
This paper presents an experimental comparison of the block-oxide (BO) source/drain-tied
(SDT)(BOSDT) polycrystalline-silicon (poly-Si) thin-film transistor (poly-Si TFT) with …