The 2016 oxide electronic materials and oxide interfaces roadmap

M Lorenz, MSR Rao, T Venkatesan… - Journal of Physics D …, 2016 - iopscience.iop.org
Oxide electronic materials provide a plethora of possible applications and offer ample
opportunity for scientists to probe into some of the exciting and intriguing phenomena …

Defect States and Polarons in Photocatalytic Semiconductors Revealed via Time-Resolved Spectroscopy

Y Xu, Z Wang, Y Weng - The Journal of Physical Chemistry C, 2024 - ACS Publications
Defect states and polarons of photocatalytic semiconductors play important roles by notably
influencing carrier mobility and reactivity. Extensive studies have focused on identifying …

Full-swing, high-gain inverters based on ZnSnO JFETs and MESFETs

O Lahr, Z Zhang, F Grotjahn, P Schlupp… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Metal-semiconductor and junction n-channel field-effect transistors (MESFETs and JFETs)
have been fabricated on glass substrates using room temperature deposited amorphous …

Program FFlexCom—High frequency flexible bendable electronics for wireless communication systems

T Meister, F Ellinger, JW Bartha… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
Today, electronics are implemented on rigid substrates. However, many objects in daily-life
are not rigid—they are bendable, stretchable and even foldable. Examples are paper, tapes …

Low‐Voltage Operation of Ring Oscillators Based on Room‐Temperature‐Deposited Amorphous Zinc‐Tin‐Oxide Channel MESFETs

O Lahr, S Vogt, H von Wenckstern… - Advanced Electronic …, 2019 - Wiley Online Library
Schottky diode FET logic (SDFL) ring oscillator circuits comprising metal‐semiconductor
field‐effect transistors (MESFETs) based on amorphous zinc‐tin‐oxide (ZTO) n‐channels …

ZnO Schottky nanodiodes processed from plasma-enhanced atomic layer deposition at near room temperature

M Shen, TP Muneshwar, KC Cadien… - … on Electron Devices, 2018 - ieeexplore.ieee.org
In this paper, we report a low thermal budget manufacturing method to produce highly
rectifying Schottky diodes with ultrathin ZnO films grown at near room temperature by …

Schottky nanodiodes based on zinc oxide thin films

M Shen - 2017 - era.library.ualberta.ca
The unique advantages like low temperature processing with device-level quality and high
transparency give ZnO an edge over other semiconductors and extremely attractive for …

New Applications for CDTE/CDS Heterojunctions: the Prospects of the Thin-Film JFET

JA Avila Avendano - 2017 - utd-ir.tdl.org
Junction Field Effect Transistors (JFETs) based on II-VI polycrystalline materials are
expected to be faster than metal-insulator-semiconductor field-effect transistors (MISFETs) …

[PDF][PDF] SEMICONDUCTING OXIDE THIN FILMS: NOVEL RECTIFYING CONTACTS FOR ELECTRONIC AND PHOTONIC APPLICATIONS

M Grundmanna - tu-chemnitz.de
We present a number of novel rectifying material combinations (thin film heterostructure
diodes) involving semiconducting oxides that provide excellent rectification [1]. We discuss …