The damage and strain induced by irradiation of both relaxed and pseudomorphic Ge x Si1−
x films on Si (100) with 100 keV 28Si ions at room temperature have been studied by MeV …

We compare both the strain and damage that 100 keV Si irradiation at room temperature
introduces in pseudomorphic and relaxed Ge x Si 1− x films grown on Si (100) substrates …

The damage produced by implanting, at room temperature, 3-μm-thick relaxed Si 1− x Ge x
alloys of high crystalline quality with 2 MeV Si+ ions has been studied as a function of Ge …

The cartography from MEIS (Medium Energy Ion Scattering) is used to measure lattice
deformation of strained Si 1–x Ge x/Si heterogeneous epitaxial structures. Higher …

Several 265-nm-thick metastable pseudomorphic Ge0, r2Sie8s films grown on a Si (100)
substrate by molecular-beam epitaxy were implanted at room temperature with 100 keV …

The influence of irradiation with 3–4 MeV electrons and subsequent annealing on Si Ge
strained layer superlattices (SLs) and Si Ge quantum wells (QWs) both containing …

The question of whether one can effectively dope or process epitaxial Si (100)/GeSi
heterostructures by ion implantation for the fabrication of Si-based heterojunction devices is …

A strained pseudomorphic Si 0.7 Ge 0.3 film grown by gas-source molecular-beam epitaxy
on Si (001) was irradiated at room temperature with 25 keV Ga+ ions. The gradual strain …

Damage and strain produced in a 370‐nm‐thick strained epitaxial Ge0. 10Si0. 90 film on Si
(100) by irradiation with 320 keV 28Si+ ions at fixed temperatures ranging from 40 to 150° C …

The RBS-channeling technique has been used to measure damage concentration profiles in
fully relaxed Si0. 76Ge0. 24 layers implanted with 2 MeV Si ions. The method of elaboration …