Kinetics of interface alloy phase formation at nanometer length scale in ultra-thin films: X-ray and polarized neutron reflectometry

S Singh, M Swain, S Basu - Progress in Materials Science, 2018 - Elsevier
Multilayer thin films of various metal pairs present model systems for studying intermetallic
alloy phase formation at interfaces of these heterostructures on annealing and help to …

Self-diffusion in germanium isotope multilayers at low temperatures

E Hüger, U Tietze, D Lott, H Bracht, D Bougeard… - Applied Physics …, 2008 - pubs.aip.org
Self-diffusion in intrinsic single crystalline germanium was investigated between 429 and
596 C using G 70 e/G nat e isotope multilayer structures. The diffusivities were determined …

Grain size effect on precipitation behavior of nanostructured Inconel 718

YG Tang, BB Zhang, B Gan, XY Li - Journal of Materials Science & …, 2024 - Elsevier
To provide insight into the effect of grain size on the precipitation behavior of γ
″strengthening superalloy Inconel 718, a gradient nanostructure with a large grain size …

Synthesis, stability and self-diffusion in iron nitride thin films: A review

M Gupta - Recent Advances in Thin Films, 2020 - Springer
Nitrides of 3 d ferromagnetic metals (Fe, Co and Ni) or transition metal nitrides (TMNs)
appearing late (Group 8–10) in the 3 d series are emerging compounds in a wide range of …

Contributions of vacancies and self-interstitials to self-diffusion in silicon under thermal equilibrium and nonequilibrium conditions

R Kube, H Bracht, E Hüger, H Schmidt, JL Hansen… - Physical Review B …, 2013 - APS
Since many years, the contribution of vacancies (V) and self-interstitials (I) to silicon (Si) self-
diffusion is a matter of debate. Native defects and their interaction among themselves and …

Li self-diffusion in lithium niobate single crystals at low temperatures

J Rahn, E Hüger, L Dörrer, B Ruprecht… - Physical Chemistry …, 2012 - pubs.rsc.org
Li self-diffusion in Li2O-deficient LiNbO3 single crystals is investigated in the temperature
range between 423 and 773 K (150–500° C) by secondary ion mass spectrometry. A thin …

[HTML][HTML] In-situ measurement of self-atom diffusion in solids using amorphous germanium as a model system

E Hüger, F Strauß, J Stahn, J Deubener, M Bruns… - Scientific reports, 2018 - nature.com
We present in-situ self-diffusion experiments in solids, which were carried out by Focussing
Neutron Reflectometry on isotope multilayers. This new approach offers the following …

Self-diffusion in amorphous silicon

F Strauß, L Dörrer, T Geue, J Stahn, A Koutsioubas… - Physical review …, 2016 - APS
The present Letter reports on self-diffusion in amorphous silicon. Experiments were done on
Si 29/Si nat heterostructures using neutron reflectometry and secondary ion mass …

Activation energy of diffusion determined from a single in-situ neutron reflectometry experiment

E Hüger, J Stahn, H Schmidt - Materials Research Letters, 2023 - Taylor & Francis
We present a new method for the determination of self-diffusivities in solids and the
corresponding activation energy of diffusion using in-situ Neutron Reflectometry. In contrast …

Atomic transport mechanisms in thin oxide films grown on zirconium by thermal oxidation, as-derived from 18O-tracer experiments

G Bakradze, LPH Jeurgens, T Acartürk, U Starke… - Acta materialia, 2011 - Elsevier
Two-stage oxidation experiments using 16O and 18O isotopes were performed to reveal the
governing atomic transport mechanism (s) in thin (thickness< 10nm) oxide films grown …