Investigation of InAs quantum dots grown on the Ge substrate without migration enhance epitaxy layer

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A theoretical study of inas/inp and inas/gaas qds systems: Formation mechanisms and photoluminescence characterization

S Sabri, R Malek, K Kassmi - Materials Today: Proceedings, 2023 - Elsevier
In this work, we have studied structural, electronic and optical properties of InAs/InP
quantum dots (QDs). Our results were compared with the theoretical and experimental …
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