Integrations and challenges of novel high-k gate stacks in advanced CMOS technology
G He, L Zhu, Z Sun, Q Wan, L Zhang - Progress in Materials Science, 2011 - Elsevier
Due to the limitations in conventional complementary metal–oxide–semiconductor (CMOS)
scaling technology in recent years, innovation in transistor structures and integration of …
scaling technology in recent years, innovation in transistor structures and integration of …
Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Electronic devices based on two-dimensional semiconductors suffer from limited electrical
stability because charge carriers originating from the semiconductors interact with defects in …
stability because charge carriers originating from the semiconductors interact with defects in …
Intrinsic charge trapping in amorphous oxide films: status and challenges
We review the current understanding of intrinsic electron and hole trapping in insulating
amorphous oxide films on semiconductor and metal substrates. The experimental and …
amorphous oxide films on semiconductor and metal substrates. The experimental and …
Internal photoemission at interfaces of high-κ insulators with semiconductors and metals
VV Afanas'Ev, A Stesmans - Journal of applied physics, 2007 - pubs.aip.org
Internal photoemission spectroscopy provides the most straightforward way to characterize
the relative energies of electron states at interfaces of insulators with metals and …
the relative energies of electron states at interfaces of insulators with metals and …
The origin of negative charging in amorphous Al2O3 films: the role of native defects
Amorphous aluminum oxide Al 2 O 3 (a-Al 2 O 3) layers grown by various deposition
techniques contain a significant density of negative charges. In spite of several experimental …
techniques contain a significant density of negative charges. In spite of several experimental …
Sub-bandgap defect states in polycrystalline hafnium oxide and their suppression by admixture of silicon
NV Nguyen, AV Davydov, D Chandler-Horowitz… - Applied Physics …, 2005 - pubs.aip.org
The crystallinity of atomic layer deposition hafnium oxide was found to be thickness
dependent, with the thinnest films being amorphous and thick films being at least partially …
dependent, with the thinnest films being amorphous and thick films being at least partially …
[图书][B] Internal photoemission spectroscopy: principles and applications
VV Afanas' ev - 2010 - books.google.com
The monographic book addresses the basics of the charge carrier photoemission from one
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …
Band alignment between (100) Si and complex rare earth∕ transition metal oxides
VV Afanas'ev, A Stesmans, C Zhao, M Caymax… - Applied physics …, 2004 - pubs.aip.org
The electron energy band alignment between (100) Si and several complex transition∕ rare
earth (RE) metal oxides ( La Sc O 3, Gd Sc O 3, Dy Sc O 3, and La Al O 3, all in …
earth (RE) metal oxides ( La Sc O 3, Gd Sc O 3, Dy Sc O 3, and La Al O 3, all in …
Energy band alignment at the interface
VV Afanas' ev, A Stesmans - Applied physics letters, 2004 - pubs.aip.org
The Ge/HfO 2 interface band diagram was directly determined using internal photoemission
of electrons and holes from Ge into the Hf oxide. The inferred offsets of the conduction and …
of electrons and holes from Ge into the Hf oxide. The inferred offsets of the conduction and …
Intrinsic electron traps in atomic-layer deposited HfO2 insulators
Analysis of photodepopulation of electron traps in HfO 2 films grown by atomic layer
deposition is shown to provide the trap energy distribution across the entire oxide bandgap …
deposition is shown to provide the trap energy distribution across the entire oxide bandgap …