Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
Ferroelectric transistors for memory and neuromorphic device applications
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
Kinetically stabilized ferroelectricity in bulk single-crystalline HfO2:Y
HfO2, a simple binary oxide, exhibits ultra-scalable ferroelectricity integrable into silicon
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
technology. This material has a polymorphic nature, with the polar orthorhombic (Pbc 21) …
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with
endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high …
endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high …
CMOS-compatible ferroelectric NAND flash memory for high-density, low-power, and high-speed three-dimensional memory
Ferroelectric memory has been substantially researched for several decades as its potential
to obtain higher speed, lower power consumption, and longer endurance compared to …
to obtain higher speed, lower power consumption, and longer endurance compared to …
HfO2-based ferroelectrics: From enhancing performance, material design, to applications
Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …
storage, and low energy consumption to fulfill the rapid developments of big data, the …
Highly-scaled and fully-integrated 3-dimensional ferroelectric transistor array for hardware implementation of neural networks
Hardware-based neural networks (NNs) can provide a significant breakthrough in artificial
intelligence applications due to their ability to extract features from unstructured data and …
intelligence applications due to their ability to extract features from unstructured data and …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …