Starting with the simplest semiclassical approaches and ending with the description of
complex fully quantum-mechanical methods for quantum transport analysis of state-of-the …

In this paper, electrical characteristics of small nanowire fin field-effect transistor (FinFET)
are investigated by using a three-dimensional quantum correction simulation. Taking …

In this review paper we describe a hierarchy of simulation models for modeling state of the
art devices. Within the semiclassical simulation arena, emphasis is placed on particle-based …

Herein this paper we propose a surface potential based analytical model for planar
junctionless field effect transistor (JL-FET) for pH sensing. The electrolyte considered is …

In state of the art devices, it is well known that quantum and Coulomb effects play significant
role on the device operation. In this book chapter we demonstrate that a novel effective …

In this paper, a simulation-based optimization methodology for nanoscale complementary
metal-oxide-semiconductor (CMOS) device fabrication is advanced. Fluctuation of electrical …

We present a multiphysics numerical technique for the characterization of high-frequency
carrier dynamics in high-conductivity materials. The technique combines the ensemble …

We propose in this paper a quantum correction transport model for nanoscale double-gate
metal-oxide-semiconductor field effect transistor (MOSFET) device simulation. Based on …

The increased leakage, yield inefficiency, process, power supply, and temperature
variations have significant aftereffects on the performance of complex VLSI architectures …

Abstract We construct 3D Monte Carlo (MC) simulations including the full Coulomb
interaction as accurately as possible. In order to achieve this goal, the usual strategy for the …