Low interface trap density and high channel mobility on nonpolar faces of 4H-SiC, such as
the (11 [2̅] 0) a-face, are of fundamental importance in the understanding of SiC MOS …

Poor electron mobility at SiC/SiO 2 interfaces has long held up the development of SiC-
based power devices. The mobility degradation has been attributed to defects at the …

We describe experimental and theoretical studies to determine the effects of phosphorous
as a passivating agent for the SiO2/4H–SiC interface. Annealing in a P2O5 ambient converts …

Betavoltaic devices are suitable for delivering low-power over periods of years. Typically,
their power density is on the order of nano to micro-Watts per cubic centimeter. In this work …

Oxidation and silicidation have been found to enhance phosphorus diffusion and
incorporation in 4H-SiC. Depth profiling by secondary ion mass spectrometry showed …

Novel method of boron diffusion at low temperatures between 1150 and 1300° C is used for
the formation of both p‐i SiC junction and i‐region in one technological process. As the …

In this work, we present a demonstration of a high-aspect ratio, three-dimensionally
structured betavoltaic device. High-aspect ratio silicon PIN diodes were used as the …

Pin 4H‐SiC〈 Al〉 diode structures are fabricated by a new approach which is low
temperature diffusion of aluminium (Al) in SiC using flow of vacancy defects from surface into …

Solid state thermal diffusion is not a common method of impurity doping in silicon carbide
(SiC) device fabrication due to the extremely high temperatures required for such a process …

The low temperature diffusion of Boron in bulk SiC crystals is investigated and simplified
model of such diffusion is presented. The method of UV stimulated etching by aqueous …