RN Gayen, R Paul, S Biswas - Applied Surface Science, 2020 - Elsevier
Transparent optoelectronics devices have recently drawn considerable research attentions for the next generation electronic technologies. Here, we fabricate highly transparent (87 to …
This paper reports a comparative study of the ultraviolet (UV) detection properties of n-TiO 2/p-Si heterojunction devices fabricated using two different deposition techniques namely …
In this study, Sb 2 S 3 films were prepared by dip coating method at 250, 300, 350, 400 and 450° C temperatures. No heat treatment was applied other than the coating temperatures …
S Arya, A Sharma, B Singh, M Riyas, P Bandhoria… - Optical Materials, 2018 - Elsevier
Abstract Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel method. The as-synthesized nanoparticles were successfully characterized and …
Much work has been carried out in recent years in fabricating and studying the Schottky contact formed between various metals and the n-type wide bandgap semiconductor zinc …
Abstract Au/ZnO/n-Si device was obtained by using atomic layer deposition (ALD) technique, and it was characterized by I–V measurement in a wide temperature from 100 to …
I Orak, A Kocyigit, Ş Alindal - Chinese Physics B, 2017 - iopscience.iop.org
Abstract Au/ZnO/n-type Si device is obtained using atomic layer deposition (ALD) for ZnO layer, and some main electrical parameters are investigated, such as surface/interface state …
VS Rana, JK Rajput, TK Pathak, LP Purohit - Thin Solid Films, 2019 - Elsevier
In the present work, ZnO thin films were deposited on fluorine doped tin oxide (FTO) and soda lime glass substrates using sol-gel spin coating technique. Cu thin films were …
Abstract In/ZnO/p-Si heterojunction diode was produced to investigate the photo- responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis …