Advances in 2D materials based mixed-dimensional heterostructures photodetectors: Present status and challenges

D Somvanshi, S Jit - Materials Science in Semiconductor Processing, 2023 - Elsevier
The unique and exceptional properties of two-dimensional (2D) materials have opened
unprecedented opportunities for exploring novel 2D phenomena for optoelectronic …

Schottky enabled enhanced UV detection by graphene oxide composited transparent ZnO thin films

RN Gayen, R Paul, S Biswas - Applied Surface Science, 2020 - Elsevier
Transparent optoelectronics devices have recently drawn considerable research attentions
for the next generation electronic technologies. Here, we fabricate highly transparent (87 to …

Ultraviolet Detection Properties of p-Si/n-TiO2 Heterojunction Photodiodes Grown by Electron-Beam Evaporation and Sol–Gel Methods: A Comparative Study

G Rawat, D Somvanshi, H Kumar… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
This paper reports a comparative study of the ultraviolet (UV) detection properties of n-TiO
2/p-Si heterojunction devices fabricated using two different deposition techniques namely …

Preparation of high-performance Sb2S3 based visible-light photodetector with excellent reversibility

E Aslan, M Zarbali - Optical Materials, 2022 - Elsevier
In this study, Sb 2 S 3 films were prepared by dip coating method at 250, 300, 350, 400 and
450° C temperatures. No heat treatment was applied other than the coating temperatures …

Sol-gel synthesis of Cu-doped p-CdS nanoparticles and their analysis as p-CdS/n-ZnO thin film photodiode

S Arya, A Sharma, B Singh, M Riyas, P Bandhoria… - Optical Materials, 2018 - Elsevier
Abstract Copper (Cu) doped p-CdS nanoparticles have been synthesized via sol-gel
method. The as-synthesized nanoparticles were successfully characterized and …

Analysis of Schottky contact formation in coplanar Au/ZnO/Al nanogap radio frequency diodes processed from solution at low temperature

J Semple, S Rossbauer… - ACS Applied Materials & …, 2016 - ACS Publications
Much work has been carried out in recent years in fabricating and studying the Schottky
contact formed between various metals and the n-type wide bandgap semiconductor zinc …

Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature

A Kocyigit, I Orak, Z Çaldıran, A Turut - Journal of Materials Science …, 2017 - Springer
Abstract Au/ZnO/n-Si device was obtained by using atomic layer deposition (ALD)
technique, and it was characterized by I–V measurement in a wide temperature from 100 to …

Electrical and dielectric characterization of Au/ZnO/n–Si device depending frequency and voltage

I Orak, A Kocyigit, Ş Alindal - Chinese Physics B, 2017 - iopscience.iop.org
Abstract Au/ZnO/n-type Si device is obtained using atomic layer deposition (ALD) for ZnO
layer, and some main electrical parameters are investigated, such as surface/interface state …

Cu sputtered Cu/ZnO Schottky diodes on fluorine doped tin oxide substrate for optoelectronic applications

VS Rana, JK Rajput, TK Pathak, LP Purohit - Thin Solid Films, 2019 - Elsevier
In the present work, ZnO thin films were deposited on fluorine doped tin oxide (FTO) and
soda lime glass substrates using sol-gel spin coating technique. Cu thin films were …

Current-voltage characteristics of nano whisker ZnO/Si heterojunction under UV exposition

NS Koc, SP Altintas, M Gokcen, M Dogruer… - Sensors and Actuators A …, 2022 - Elsevier
Abstract In/ZnO/p-Si heterojunction diode was produced to investigate the photo-
responsivity and electrical features under ultraviolet (UV) light. A hydrothermal synthesis …