ReRAM: History, status, and future
Y Chen - IEEE Transactions on Electron Devices, 2020 - ieeexplore.ieee.org
This article reviews the resistive random-access memory (ReRAM) technology initialization
back in the 1960s and its heavily focused research and development from the early 2000s …
back in the 1960s and its heavily focused research and development from the early 2000s …
Device and materials requirements for neuromorphic computing
Energy efficient hardware implementation of artificial neural network is challenging due
the'memory-wall'bottleneck. Neuromorphic computing promises to address this challenge by …
the'memory-wall'bottleneck. Neuromorphic computing promises to address this challenge by …
Thin film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity
A design concept of phase-separated amorphous nanocomposite thin films is presented that
realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are …
realizes interfacial resistive switching (RS) in hafnium-oxide-based devices. The films are …
Resistive random access memory for future information processing system
Resistive random access memory (RRAM) is regarded as one of the most promising
emerging memory technologies for next-generation embedded, standalone nonvolatile …
emerging memory technologies for next-generation embedded, standalone nonvolatile …
Memristor-based signal processing for edge computing
The rapid growth of the Internet of Things (IoTs) has resulted in an explosive increase in
data, and thus has raised new challenges for data processing units. Edge computing, which …
data, and thus has raised new challenges for data processing units. Edge computing, which …
Simple binary ovonic threshold switching material SiTe and its excellent selector performance for high-density memory array application
In this letter, simple binary Ovonic threshold switching (OTS) material with outstanding
selector device performance has been demonstrated. Even with its simple material …
selector device performance has been demonstrated. Even with its simple material …
Resistive RAM-centric computing: Design and modeling methodology
Memory-centric computing with on-chip nonvolatile memories provides unique opportunities
for native and local information processing in an energy-efficient manner. Design and …
for native and local information processing in an energy-efficient manner. Design and …
Vacancy-modulated self-rectifying characteristics of NiOx/Al2O3-based nanoscale ReRAM devices
JH Lee, JH Park, TD Dongale, TG Kim - Journal of Alloys and Compounds, 2020 - Elsevier
A vacancy-modulated self-rectifying resistive random access memory (ReRAM) with a Ti/NiO
x/Al 2 O 3/Pt structure is proposed in this study. Here, NiO x is used as a resistive switching …
x/Al 2 O 3/Pt structure is proposed in this study. Here, NiO x is used as a resistive switching …
[HTML][HTML] Sensing circuit design techniques for RRAM in advanced CMOS technology nodes
D Zhang, B Peng, Y Zhao, Z Han, Q Hu, X Liu, Y Han… - Micromachines, 2021 - mdpi.com
Resistive random access memory (RRAM) is one of the most promising new nonvolatile
memories because of its excellent properties. Moreover, due to fast read speed and low …
memories because of its excellent properties. Moreover, due to fast read speed and low …
[HTML][HTML] An 8-bit Radix-4 non-volatile parallel multiplier
C Fu, X Zhu, K Huang, Z Gu - Electronics, 2021 - mdpi.com
The data movement between the processing and storage units has been one of the most
critical issues in modern computer systems. The emerging Resistive Random Access …
critical issues in modern computer systems. The emerging Resistive Random Access …