Recent progress of hafnium oxide-based ferroelectric devices for advanced circuit applications
Hafnium oxide-based ferroelectric field-effect-transistors (FeFET), which combine super-
steep logical switching and low power non-volatile memory functions, have significant …
steep logical switching and low power non-volatile memory functions, have significant …
Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0. 5Zr0. 5O2 ferroelectric thin films
Y Zheng, Y Zhang, T Xin, Y Xu, S Qu, J Zheng… - Materials Today …, 2023 - Elsevier
Abstract Domain walls (DWs) play an essential role in altering the polarization and related
properties of ferroelectric materials, and are regulated by the mechanism of changing atomic …
properties of ferroelectric materials, and are regulated by the mechanism of changing atomic …
Re-Annealing-Induced Recovery in 7nm Hf0.5Zr0.5O2 Ferroelectric Film: Phase Transition and Non-Switchable Region Repair
To achieve HfO2-based ferroelectric (FE) devices with robust reliabilities, the impacts of re-
annealing on 7nm FE-Hf Zr0. 5O2 (HZO) capacitors are comprehensively studied in this …
annealing on 7nm FE-Hf Zr0. 5O2 (HZO) capacitors are comprehensively studied in this …
Improved Ferroelectricity in Cryogenic Phase Transition of Hf0.5Zr0.5O2
Cryogenic transition from metastable tetragonal phase (t-phase) to orthorhombic phase (o-
phase) is crucial in achieving the desired ferroelectric characteristics. Observing the …
phase) is crucial in achieving the desired ferroelectric characteristics. Observing the …
Optimizing the Ferroelectric Properties of Hf1–xZrxO2 Films via Crystal Orientation
This study exploits the coupling of crystallographic and ferroelectric (FE) properties in an
effort to enhance the FE performance of Hf1–x Zr x O2 (HZO). The proposed scheme …
effort to enhance the FE performance of Hf1–x Zr x O2 (HZO). The proposed scheme …
Exploring BEOL-Compatible Ferroelectricity in Ultra-Thin Hafnium Zirconium Oxide: Thermal Budget, FTJ Characteristics, and Device Reliability
The use of hafnium-zirconium oxide (HZO) in ferroelectric memory has garnered significant
interest due to its excellent scalability and compatibility with complementary metal-oxide …
interest due to its excellent scalability and compatibility with complementary metal-oxide …
The Fluctuation Effect of Remnant Polarization in Hf0.5Zr0.5O2 Capacitors at Elevated Temperatures
Z Gao, Y Zheng, T Xin, C Liu, Q Zhao… - IEEE Electron …, 2024 - ieeexplore.ieee.org
Studying the ferroelectric (FE) polarization behavior and failure mechanism of hafnia-based
FE devices at varying temperatures is essential for enhancing the reliability of FE memory …
FE devices at varying temperatures is essential for enhancing the reliability of FE memory …
Energy-Efficient Annealing Process of Ferroelectric Hf0. 5Zr0. 5O2 Capacitor Using Ultraviolet-LED for Green Manufacturing
H Yamada, S Furue, T Yokomori, Y Itoya… - IEEE Journal of the …, 2024 - ieeexplore.ieee.org
Thermal annealing process plays an important role in the formation of ferroelectric phase in
Hf0. 5Zr0. 5O2 (HZO) thin films. In this study, the annealing process of the HZO capacitors is …
Hf0. 5Zr0. 5O2 (HZO) thin films. In this study, the annealing process of the HZO capacitors is …
鐵電薄膜低溫相變及厚度效應之電性分析
邢軼凡 - 2023 - tdr.lib.ntu.edu.tw
本篇論文討論基於氧化鉿鋯之鐵電薄膜, 用於新型非揮發性記憶體. 我們採用電漿輔助原子層
沉積方法沉積HfO2-ZrO2 混合物, 並沉積TiN 上下電極形成金屬-鐵電氧化物-金屬電容結構 …
沉積方法沉積HfO2-ZrO2 混合物, 並沉積TiN 上下電極形成金屬-鐵電氧化物-金屬電容結構 …
Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated Temperatures
Z Gao, T Xin, C Liu, Y Xu, Y Wang… - 2024 IEEE …, 2024 - ieeexplore.ieee.org
In this study, we investigated the reversible and irreversible polarization degradation of
hafnia-based ferroelectric capacitors (FeCAPs) using the state-of-the-art spherical …
hafnia-based ferroelectric capacitors (FeCAPs) using the state-of-the-art spherical …