Growth mechanism of self-catalyzed group III− V nanowires
B Mandl, J Stangl, E Hilner, AA Zakharov, K Hillerich… - Nano …, 2010 - ACS Publications
Group III− V nanowires offer the exciting possibility of epitaxial growth on a wide variety of
substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free …
substrates, most importantly silicon. To ensure compatibility with Si technology, catalyst-free …
Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si (111) grown by selective area molecular beam epitaxy
S Hertenberger, D Rudolph, M Bichler… - Journal of Applied …, 2010 - pubs.aip.org
We investigated the interwire distance dependence on the growth kinetics of vertical, high-
yield InAs nanowire arrays on Si (111) grown by catalyst-free selective area molecular beam …
yield InAs nanowire arrays on Si (111) grown by catalyst-free selective area molecular beam …
Self-catalyzed growth of GaAs nanowires on cleaved Si by molecular beam epitaxy
Self-assembled GaAs nanowires have been grown on Si by molecular beam epitaxy without
the use of any outside metal catalyst. The growth occurs on Si facets obtained by the …
the use of any outside metal catalyst. The growth occurs on Si facets obtained by the …
Self-induced growth of vertical free-standing InAs nanowires on Si (111) by molecular beam epitaxy
G Koblmüller, S Hertenberger, K Vizbaras… - …, 2010 - iopscience.iop.org
We report self-induced growth of vertically aligned (ie along the [111] direction), free-
standing InAs nanowires on Si (111) substrates by solid-source molecular beam epitaxy …
standing InAs nanowires on Si (111) substrates by solid-source molecular beam epitaxy …
Pressure-induced orientation control of the growth of epitaxial silicon nanowires
A Lugstein, M Steinmair, YJ Hyun, G Hauer… - Nano …, 2008 - ACS Publications
Single crystal silicon nanowires (SiNWs) were synthesized with silane reactant using Au
nanocluster-catalyzed one-dimensional growth. We have shown that under our …
nanocluster-catalyzed one-dimensional growth. We have shown that under our …
Recent research on one-dimensional silicon-based semiconductor nanomaterials: synthesis, structures, properties and applications
Z Zhang, R Zou, L Yu, J Hu - Critical Reviews in Solid State and …, 2011 - Taylor & Francis
The field of silicon nanowires (SiNWs) and silicon-based 1D nanostructured
heterostructures represent one of the most important research subjects within the …
heterostructures represent one of the most important research subjects within the …
A mild solution strategy for the synthesis of mesoporous CeO2 nanoflowers derived from Ce (HCOO) 3
In this paper, a facile and economical route based on an oxidation induced phase
transformation in alcoholic solution was developed to prepare mesoporous CeO2 …
transformation in alcoholic solution was developed to prepare mesoporous CeO2 …
Growth of branching Si nanowires seeded by Au–Si surface migration
Gold–silicon eutectic liquid surface migration is employed during an intermediate annealing
to synthesize branched silicon nanowires by the vapor–liquid–solid (VLS) mechanism …
to synthesize branched silicon nanowires by the vapor–liquid–solid (VLS) mechanism …
Controlled Growth of Parallel Oriented ZnO Nanostructural Arrays on Ga2O3 Nanowires
L Mazeina, YN Picard, SM Prokes - Crystal Growth and Design, 2009 - ACS Publications
Novel hierarchical ZnO− Ga2O3 nanostructures were fabricated via a two stage growth
process. Nanowires of Ga2O3 were obtained in the first stage by the vapor− liquid− solid …
process. Nanowires of Ga2O3 were obtained in the first stage by the vapor− liquid− solid …
Excitonic recombination and absorption in InGaAs/GaAs heterostructure nanowires
Photoluminescence (PL), micro-PL, and PL excitation (PLE) spectroscopy for different light
polarizations have been used to investigate the electronic properties of GaAs characterized …
polarizations have been used to investigate the electronic properties of GaAs characterized …