Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (VC) in
4 H-SiC and its negative-U properties have been determined. Combining EPR and deep …

With low energy electron irradiation in the 80–250 keV range, we were able to create only
those intrinsic defects related to the initial displacements of carbon atoms in the silicon …

The effects of measurement technique and measurement conditions (eg, injection level,
temperature) on measured carrier lifetimes in n− 4H-SiC epilayers are investigated both …

A modified model of metal-semiconductor contacts is applied to analyze the capacitance-
voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The …

Deep levels in n-type 4H-SiC epilayers have been investigated by deep level transient
spectroscopy (DLTS). The Z 1∕ 2 and EH 6∕ 7 centers are dominant in as-grown samples …

Annealing behavior between room temperature and 2000 C of deep level defects in electron-irradiated
n-type 4H silicon carbide | Journal of Applied Physics | AIP Publishing Skip to Main Content …

The effects on 4H-silicon carbide epilayers of irradiation with protons and electrons having
particle energies, respectively, of 6.5 and 8.2 MeV were carefully studied and critically …

A ferroelectric-like hysteresis loop is obtained for a nonferroelectric system consisting of two
back-to-back metal-semiconductor Schottky contacts with a large concentration of traps …

As a wide bandgap semiconductor, SiC holds great importance for high temperature and
high power devices. It is known that the intrinsic defects play key roles in determining the …

Low temperature annealing of electron irradiation-induced deep levels in 4 H-SiC is
reported. The major deep level transient spectroscopy peak S2 associated with the energy …