We review the history and modern state of silicon carbide and SiC-based devices. The main
techniques for growing bulk SiC crystals and epitaxial SiC films are discussed. Epitaxial SiC …

Silicon nanowires incorporating p-type/n-type (pn) junctions have been introduced as basic
building blocks for future nanoscale electronic components. Controlling charge flow through …

For Silicon Carbide (SiC) high-voltage rectifier diodes, contradictions appear when the most
important parameter of the diodes, the minority carrier lifetime, is measured by different …

We discuss a type of ionization front in layered semiconductor structures. The propagation is
due to the interplay of band-to-band tunneling and impact ionization. Our numerical …

В настоящее время освоение широкозонных материалов: карбида кремния SiC и
нитридов III-й группы—становится одним из главных направлений развития …

A modified form of Ohm's law, describing electric currents through ion tracks, is presented as
a tool for future theoretical modeling efforts related to charge collection from ion tracks in …

Charge collection from ion tracks in epi diodes is investigated. As previously noted by
others, the collected charge can exceed the charge liberated in the epi layer. Fundamental …

In this paper, ways to create silicon carbide p+-emitters with high injection coefficients are
considered. Raising the emitter doping level, eliminating the deteriorated layer, and making …

An overview of the transport model describing electron and hole motion and density in solids
with position-dependent band structures is presented. This includes materials with …

The global-in-time existence of non-negative solutions to a parabolic strongly coupled
system with mixed Dirichlet–Neumann boundary conditions is shown. The system describes …