The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility
transistor (HEMT) technology has received much attention in the past decade. The peak …

Comprising two volumes, Thermoelectrics and Its Energy Harvesting reviews the vast
improvements in technology and application of thermoelectric energy with a specific …

Thermal boundary resistance dominates the overall resistance of nanosystems. This effect
can be utilized to improve the figure of merit of thermoelectric materials. It is also a concern …

This work presents a coarse-grained atomistic study of the effect of phonons on the mobility
of edge dislocations. A variety of phenomena, including phonon focusing and phonon …

In nanosystems, the thermal resistance between materials typically dominates the overall
resistance. While size effects on thermal conductivity are well documented, size effects on …

We present a rigorous Green-Kubo methodology for calculating transport coefficients based
on on-the-fly estimates of:(a) statistical stationarity of the relevant process, and (b) error in …

The propagation of a heat pulse in a single crystal and across grain boundaries (GBs) is
simulated using a concurrent atomistic-continuum method furnished with a coherent phonon …

This work presents the recent progress in the development of the concurrent atomistic-
continuum (CAC) method for coarse-grained space-and time-resolved atomistic simulations …

Thermal conductivities in bulk Si and Si films are analyzed using a Monte Carlo method to
solve the phonon Boltzmann transport equation. By taking into account the realistic phonon …

Thermal boundary resistance (inverse of conductance) between different material layers can
dominate the overall thermal resistance in nanostructures and therefore impact the …