A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization
J Seo - Journal of Materials Research, 2021 - Springer
As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …
mechanical planarization (CMP) technology has grown by leaps and bounds over the past …
Experimental and density functional theory study of complexing agents on cobalt dissolution in alkaline solutions
L Hu, X Zhang, H Wang, J Zhang, R Xia, J Cao… - Electrochimica Acta, 2021 - Elsevier
Abstract Glycine (GLY), potassium tartrate (PT), and hydroxyethylidene diphosphonic acid
(HEDP) have been used as effective complexing agents for chemical mechanical polishing …
(HEDP) have been used as effective complexing agents for chemical mechanical polishing …
Experimental and density functional theory study of benzohydroxamic acid as a corrosion inhibitor in chemical mechanical polishing of Co interconnects
J Cao, Q Liu, R Xia, G Pan, L Hu, Y Qi - Colloids and Surfaces A …, 2023 - Elsevier
Benzohydroxamic acid (BHA) was evaluated for the first time as a corrosion inhibitor for
cobalt (Co) films polishing for interconnect application. The inhibition mechanism of the BHA …
cobalt (Co) films polishing for interconnect application. The inhibition mechanism of the BHA …
Synthesis, crystal structure, thermal analysis, spectroscopic, optical polarizability, and DFT studies, and molecular docking approaches of novel 2-methyl …
A Ferchichi, J Makhlouf, K Chukwuemeka… - New Journal of …, 2024 - pubs.rsc.org
This work aims to investigate novel structures based on 2-methylbenzylamine cations
[(C8H12N) 2Co (SCN) 4](1) and [(C8H12N) SCN](2). The novel complexes were …
[(C8H12N) 2Co (SCN) 4](1) and [(C8H12N) SCN](2). The novel complexes were …
Experimental validation and molecular dynamics simulation of removal of PO residue on Co surface by alkaline cleaning solution with different functional groups
X Sun, S Zhang, M Liu, B Tan, Y He, D Yin… - Colloids and Surfaces A …, 2021 - Elsevier
Potassium oleate (PO) is a promising inhibitor for cobalt wiring chemical mechanical
polishing (CMP) of integrated circuit (IC) to replace benzotriazole (BTA). The insoluble Co …
polishing (CMP) of integrated circuit (IC) to replace benzotriazole (BTA). The insoluble Co …
Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects
L Zhang, S Wang, T Wang, X Lu - The International Journal of Advanced …, 2023 - Springer
Cobalt (Co), with its low resistivity, superior adhesion property, and void-free seamless fill
ability, is being considered by the industry as a promising candidate to replace the …
ability, is being considered by the industry as a promising candidate to replace the …
Investigation of the impact of pad surface texture from different pad conditioners on the CMP performance
AJ Khanna, M Yamamura, VR Kakireddy… - ECS Journal of Solid …, 2020 - iopscience.iop.org
Chemical mechanical polishing (CMP) is a common method for planarization/polishing
materials during integrated circuits (IC) fabrication. Pad conditioning is a critical component …
materials during integrated circuits (IC) fabrication. Pad conditioning is a critical component …
Characterization of different cobalt surfaces and interactions with benzotriazole for CMP application
HY Ryu, CH Lee, JK Hwang, HW Cho… - ECS Journal of Solid …, 2020 - iopscience.iop.org
Different cobalt surfaces (as-received, metallic, and oxidized Co) were characterized by
contact angle measurements, FTIR (Fourier-transform infrared spectroscopy), XPS (X-ray …
contact angle measurements, FTIR (Fourier-transform infrared spectroscopy), XPS (X-ray …
Soft chemical mechanical polishing pad for oxide CMP applications
NB Kenchappa, R Popuri… - ECS Journal of Solid …, 2021 - iopscience.iop.org
Chemical mechanical polishing (CMP) is widely accepted as the best planarization
technique for fabricating nanoscale devices. A soft CMP pad that can enable higher oxide …
technique for fabricating nanoscale devices. A soft CMP pad that can enable higher oxide …
Post-CMP cleaning solutions for the removal of organic contaminants with reduced galvanic corrosion at copper/cobalt interface for advanced Cu interconnect …
It has been difficult to remove BTA-related organic residues (BTA, Cu-BTA, and Co-BTA
complexes) and silica abrasives from various surfaces during post Cu-CMP cleaning when …
complexes) and silica abrasives from various surfaces during post Cu-CMP cleaning when …