Semiconductor systems and methods may include a semiconductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The …

Semiconductor systems and methods may include a semi conductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The cham …

A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers over a substrate. A material layer stack containing, from outside to …

3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628 4,265.943
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …

Described processing chambers may include a chamber housing at least partially defining
an interior region of the semiconductor processing chamber. The chambers may include a …

Processing methods may be performed to expose a contact region on a semiconductor
substrate. The methods may include selectively removing a first region of a silicon material …

An exemplary system may include a chamber configured to contain a semiconductor
substrate in a processing region of the chamber. The system may include a first remote …

Embodiments of the present technology may include a method of etching a substrate. The
method may include striking a plasma discharge in a plasma region. The method may also …

An apparatus for supplying plasma products includes a plasma generation block that
defines a toroidal plasma cavity therein. The plasma cavity is substantially symmetric about …

Methods are described herein for etching metal films which are difficult to volatize. The
methods include exposing a metal film to a chlorine-containing precursor (eg Cl 2). Chlorine …