Germanium tin: silicon photonics toward the mid-infrared
E Kasper, M Kittler, M Oehme, T Arguirov - Photonics Research, 2013 - opg.optica.org
Germanium tin (GeSn) is a group IV semiconductor with a direct band-to-band transition
below 0.8 eV. Nonequilibrium GeSn alloys up to 20% Sn content were realized with low …
below 0.8 eV. Nonequilibrium GeSn alloys up to 20% Sn content were realized with low …
Junctionless poly-GeSn ferroelectric thin-film transistors with improved reliability by interface engineering for neuromorphic computing
CP Chou, YX Lin, YK Huang, CY Chan… - ACS applied materials …, 2019 - ACS Publications
Ferroelectric HfZrO x (Fe-HZO) with a larger remnant polarization (P r) is achieved by using
a poly-GeSn film as a channel material as compared with a poly-Ge film because of the …
a poly-GeSn film as a channel material as compared with a poly-Ge film because of the …
Germanium-Zinn Molekularstrahlepitaxie zur Herstellung von L-Band Photodioden
J Werner - 2013 - elib.uni-stuttgart.de
Die wichtigsten Lichtwellenlängen für Telekommunikationssysteme sind momentan 1310
nm und 1550 nm. Dies liegt vor allem an der geringen Dämpfung, der zurzeit verwendeten …
nm und 1550 nm. Dies liegt vor allem an der geringen Dämpfung, der zurzeit verwendeten …