Low dielectric constant materials
Modern computer microprocessor chips are marvels of engineering complexity. For the
current 45 nm technology node, there may be nearly a billion transistors on a chip barely 1 …
current 45 nm technology node, there may be nearly a billion transistors on a chip barely 1 …
Synthesis and modification of silicon nanosheets and other silicon nanomaterials
H Okamoto, Y Sugiyama… - Chemistry–A European …, 2011 - Wiley Online Library
Silicon nanomaterials and nanostructures exhibit different properties from those of bulk
silicon materials based on quantum confinement effects. They are expected to lead to the …
silicon materials based on quantum confinement effects. They are expected to lead to the …
Plasma processing of low-k dielectrics
This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …
the field of plasma processing of low dielectric constant (low-k) materials developed for …
[HTML][HTML] Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models
MR Baklanov, V Jousseaume, TV Rakhimova… - Applied Physics …, 2019 - pubs.aip.org
This paper presents an in-depth overview of the application and impact of UV/VUV light in
advanced interconnect technology. UV light application in BEOL historically was mainly …
advanced interconnect technology. UV light application in BEOL historically was mainly …
Selective Ru ALD as a catalyst for sub-seven-nanometer bottom-up metal interconnects
I Zyulkov, M Krishtab, S De Gendt… - ACS applied materials & …, 2017 - ACS Publications
Integrating bottom-up area-selective building-blocks in microelectronics has a disruptive
potential because of the unique capability of engineering new structures and architectures …
potential because of the unique capability of engineering new structures and architectures …
[图书][B] Metrology and Diagnostic Techniques for Nanoelectronics
Z Ma, DG Seiler - 2017 - taylorfrancis.com
Nanoelectronics is changing the way the world communicates, and is transforming our daily
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
lives. Continuing Moore's law and miniaturization of low-power semiconductor chips with …
Toward successful integration of porous low-k materials: Strategies addressing plasma damage
The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …
Superhydrophobic polymeric films with hierarchical structures produced by nanoimprint (NIL) and plasma roughening
J Durret, PD Szkutnik, N Frolet, S Labau… - Applied Surface …, 2018 - Elsevier
The structuration of various polymeric films has been studied to create superhydrophobic
surfaces. Nanoimprint lithography and/or plasma etching processes with CF 4/Ar have been …
surfaces. Nanoimprint lithography and/or plasma etching processes with CF 4/Ar have been …
Interaction of F atoms with SiOCH ultra-low-k films: I. Fluorination and damage
TV Rakhimova, DV Lopaev… - Journal of Physics D …, 2015 - iopscience.iop.org
The interaction of F atoms with porous SiOCH low-k films at a temperature of~ 14 C is
studied both experimentally and theoretically. Samples of different ultra-low-k SiOCH films …
studied both experimentally and theoretically. Samples of different ultra-low-k SiOCH films …
Damage by radicals and photons during plasma cleaning of porous low-k SiOCH. I. Ar/O2 and He/H2 plasmas
Porous dielectric materials offer lower capacitances that reduce RC time delays in integrated
circuits. Typical porous low dielectric (low-k) materials include SiOCH—silicon dioxide with …
circuits. Typical porous low dielectric (low-k) materials include SiOCH—silicon dioxide with …