The excitation of surface-phonon-polariton (SPhP) modes in polar dielectric crystals and the
associated new developments in the field of SPhPs are reviewed. The emphasis of this work …

With the increasing demand of silicon carbide (SiC) power devices that outperform the
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …

Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

The paths of basal plane dislocations (BPDs) through 4 H-SiC epitaxial layers grown on
wafers with an 8 offcut were tracked using ultraviolet photoluminescence imaging. The …

The morphology and nucleation sites of stacking faults formed during the forward operation
of 4H silicon carbide pin diodes were investigated using optical emission microscopy (OEM) …

The driving force of stacking-fault expansion in SiC pin diodes was investigated using
optical emission microscopy and transmission electron microscopy. The stacking-fault …

To investigate the mechanism of contraction/expansion behavior of Shockley stacking faults
(SSFs) in 4H-SiC p–i–n diodes, the dependences of the SSF behavior on temperature and …

A non-destructive technique to image the dislocations and other extended defects in SiC
epitaxial layers has been developed. Basal plane dislocations (BPDs) and threading …

As silicon carbide power devices enter the commercial power electronics market there is a
strong interest in all aspects of their reliability. This work discusses the degradation of …

Using site-specific plan-view transmission electron microscopy (TEM) and light emission
imaging, we have identified stacking faults formed during forward biasing of 4H-SiC pin …