▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …

We review the present status of the rapidly developing field of semiconductor laser diodes
based on self-organized quantum dots (QDs). Several milestones have been achieved since …

Semiconductor heterostructures with self-organized quantum dots (QDs) have
experimentally exhibited properties expected for zero-dimensional systems. When used as …

We have examined the dynamic properties of high-aspect-ratio InAs-quantum-dot (QD)
lasers at room temperature. A novel characteristic of low chirp in the lasing wavelength …

We have performed pump-probe differential transmission spectroscopy (DTS)
measurements on In/sub 0.4/Ga/sub 0.6/As-GaAs-AlGaAs heterostructures, which show that …

We report InGaAs quantum dot intersubband infrared photodetectors grown by low-pressure
metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The optimum …

The modulation bandwidth of conventional 1.0–1.3 µm self-organized In (Ga) As quantum
dot (QD) lasers is limited to∼ 6–8 GHz due to hot carrier effects arising from the …

The modulation response of quantum dot (QD) lasers is analyzed using a quasi-equilibrium
approach. The model suggests that present QD lasers are limited due to hole levels that are …

Self-organized growth of InGaAs/GaAs strained epitaxial layers gives rise to an ordered
array of islands via the Stranski-Krastanow growth mode, for misfits> 1.8%. These islands …

We present a theoretical analysis of the gain recovery and chirp characteristics of quantum-
dot semiconductor optical amplifier (QD-SOA). We have derived an analytical expression for …