Some embodiments include device having a gate spaced from semiconductor channel
material by a dielectric region, and having nitrogen-containing material directly against the …

In one embodiment, a semiconductor device includes a substrate, and a plurality of
electrode layers provided sepa rately from each other in a first direction perpendicular to a …

A semiconductor memory device according to an embodiment includes: a semiconductor
layer; a gate electrode layer; a first insulating layer provided between the semiconductor …

Some embodiments include device having a gate spaced from semiconductor channel
material by a dielectric region, and having nitrogen-containing material directly against the …

(57) ABSTRACT A semiconductor device comprising: a substrate; an elec trode structure
disposed on the substrate while extending in a first direction, the electrode structure …

(57) ABSTRACT A transistor comprises a channel region having a frontside and a backside.
A gate is adjacent the frontside of the channel region with a gate insulator being between …

A method used in forming a memory array comprising strings of memory cells comprises
forming an upper stack directly above a lower stack. The lower stack comprises vertically …

(57) ABSTRACT A method used in forming a memory array comprising strings of memory
cells comprises forming an upper stack directly above a lower stack. The lower stack …

A memory array comprising strings of memory cells comprises an upper stack above a lower
stack. The lower stack comprises vertically-alternating lower conductive tiers and lower …

2021-02-03 Assigned to APPLIED MATERIALS, INC. reassignment APPLIED MATERIALS,
INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS) …