The future of ferroelectric field-effect transistor technology

AI Khan, A Keshavarzi, S Datta - Nature Electronics, 2020 - nature.com
The discovery of ferroelectricity in oxides that are compatible with modern semiconductor
manufacturing processes, such as hafnium oxide, has led to a re-emergence of the …

Compute-in-memory chips for deep learning: Recent trends and prospects

S Yu, H Jiang, S Huang, X Peng… - IEEE circuits and systems …, 2021 - ieeexplore.ieee.org
Compute-in-memory (CIM) is a new computing paradigm that addresses the memory-wall
problem in hardware accelerator design for deep learning. The input vector and weight …

Memory technology—a primer for material scientists

T Schenk, M Pešić, S Slesazeck… - Reports on Progress …, 2020 - iopscience.iop.org
From our own experience, we know that there is a gap to bridge between the scientists
focused on basic material research and their counterparts in a close-to-application …

Novel nanocomposite-superlattices for low energy and high stability nanoscale phase-change memory

X Wu, AI Khan, H Lee, CF Hsu, H Zhang, H Yu… - Nature …, 2024 - nature.com
Data-centric applications are pushing the limits of energy-efficiency in today's computing
systems, including those based on phase-change memory (PCM). This technology must …

Unveiling the effect of superlattice interfaces and intermixing on phase change memory performance

AI Khan, X Wu, C Perez, B Won, K Kim, P Ramesh… - Nano Letters, 2022 - ACS Publications
Superlattice (SL) phase change materials have shown promise to reduce the switching
current and resistance drift of phase change memory (PCM). However, the effects of internal …

Compute-in-memory with emerging nonvolatile-memories: Challenges and prospects

S Yu, X Sun, X Peng, S Huang - 2020 ieee custom integrated …, 2020 - ieeexplore.ieee.org
This invited paper surveys the recent progresses of compute-in-memory (CIM) prototype
chip designs with emerging nonvolatile memories (eNVMs) such as resistive random access …

Material and process engineering challenges in Ge-rich GST for embedded PCM

A Redaelli, E Petroni, R Annunziata - Materials Science in Semiconductor …, 2022 - Elsevier
Abstract Phase-Change Memory (PCM) is one of the most recent technologies to enter the
embedded memory market for consumer-and automotive-grade applications. However …

Challenges and trends indeveloping nonvolatile memory-enabled computing chips for intelligent edge devices

JM Hung, X Li, J Wu, MF Chang - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Under the von Neumann computing architecture, the edge devices used for artificial
intelligence (AI) and the Internet of Things (IoTs) are limited in terms of latency and energy …

SRAM cell design challenges in modern deep sub-micron technologies: An overview

W Gul, M Shams, D Al-Khalili - Micromachines, 2022 - mdpi.com
Microprocessors use static random-access memory (SRAM) cells in the cache memory
design. As a part of the central computing component, their performance is critical. Modern …

Nvmexplorer: A framework for cross-stack comparisons of embedded non-volatile memories

L Pentecost, A Hankin, M Donato, M Hempstead… - arXiv preprint arXiv …, 2021 - arxiv.org
Repeated off-chip memory accesses to DRAM drive up operating power for data-intensive
applications, and SRAM technology scaling and leakage power limits the efficiency of …