This paper reviews recent development on compact modeling of multiple-gate (MG)
MOSFETs. Long-channel core models based on the analytical potential solutions of Poisson …

In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-
Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication …

In this article, an accurate representation of threshold voltage for double metal double gate
(DMDG) device structure has been initiated. It is the lowest gate-source electromotive force …

A new compact analytical model for short channel triple gate junctionless transistors is
proposed. Based on a previous model for double-gate transistors which neglected the fin …

We report a systematic, quantitative investigation of analog and RF performance of
cylindrical surrounding-gate (SRG) silicon MOSFET. To derive the model, a pseudo-two …

Analytical expressions are presented to model the behavior of the potential at the surface
and the difference of potentials at the surface and at the center of the doped silicon layer as …

An analytical drain current model for undoped (or lightly-doped) symmetric double-gate (DG)
MOSFETs is presented. This model is based on the subthreshold leakage current in weak …

This article depicts the drain current for a graded channel double metal double gate
(GCDMDG) device in a unique way. This work offers a thorough examination of the drain …

A new charge-based continuous model for long-channel Symmetric Double-Gate
Junctionless Transistors (SDGJLTM) is proposed and validated with simulations for doping …

This work presents an analytical model for the drain and gate currents of silicon nanowire
and nanosheet MOS transistors valid in all operating regions in the temperature range from …