n-Type (phosphorus-doped) diamond is a promising material for diamond-based electronic
devices. However, realizing good ohmic contacts for phosphorus-doped diamonds limits …

The growth of gradual boron-doped diamond epitaxial layer was achieved by microwave
plasma chemical vapor deposition (MPCVD). Secondary ion mass spectrometry (SIMS) …

Membrane filtration is regarded as one of the promising technologies for water treatment.
However, insufficient micropollutants removal and membrane fouling still limited the further …

In this work, we have designed a novel gas inlet structure for efficient usage of growth and
doping precursors. Our previous gas injection configuration is that the gas is mixed to one …

Boron-and phosphorus-doped diamond layers were analysed by glow discharge optical
emission spectroscopy. A methodology for quantitative depth profiling of layers was …

Ohmic contacts with low specific contact resistance are necessary for fabrication of diamond
electronic devices. This work reports that graphite/diamond ohmic contacts can be obtained …

Abstract Pseudo-vertical diodes on {113} oriented homoepitaxial boron-doped diamond
were successfully fabricated using molybdenum as a metal for both the Schottky and ohmic …

In the present study, a growth strategy allowing widening thick heavily boron doped (113)-
oriented diamonds is proposed. It relies on a geometrical model developed at the LSPM …

Electrical properties of pseudo‐vertical Schottky barrier diodes (pVSBDs) prepared on (113)–
oriented boron‐doped diamond (BDD) layers using ruthenium (Ru) for both the ohmic and …

Low‐resistance Ohmic contacts are necessary for high‐performance electronic devices.
Ultrawide‐bandgap semiconductor materials typically have high‐resistance Ohmic contacts …