Ultrashallow doping is required for both classical field-effect transistors in integrated circuits
and revolutionary quantum devices in quantum computing. In this review, we give a brief …

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with
lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These …

Scaling of Si-based nanoelectronics has reached the regime where device function is
affected not only by the presence of individual dopants, but also by their positions in the …

Sharply defined dopant profiles and low resistivity are highly desired qualities in the
microelectronic industry, and more recently, in the development of an all epitaxial Si: P …

The key building blocks for the fabrication of devices based on the deterministic placement
of dopants in silicon using scanning tunneling microscopy (STM) hydrogen lithography are …

Advanced hydrogen lithography techniques and low-temperature epitaxial overgrowth
enable the patterning of highly phosphorus-doped silicon (Si: P) monolayers (ML) with …

Quantum dots patterned by atomically precise placement of phosphorus donors in single
crystal silicon have long spin lifetimes, advantages in addressability, large exchange …

Current atomically-precise fabrication methods in Si utilize a scanning tunneling microscope
(STM) to pattern a monatomic resist adsorbed on Si (100). Recent interest in the use of Cl …

The precise positioning of dopants in semiconductors using scanning tunneling
microscopes has led to the development of planar dopant-based devices, also known as δ …

The ability to apply gigahertz frequencies to control the quantum state of a single P atom is
an essential requirement for the fast gate pulsing needed for qubit control in donor-based …