Nanotips: growth, model, and applications
S Chattopadhyay, LC Chen… - Critical Reviews in Solid …, 2006 - Taylor & Francis
The tip morphology in the nanoscale is discussed as a member of the one-dimensional
nanostructure family. Different growth techniques used for the synthesis of the nanotips have …
nanostructure family. Different growth techniques used for the synthesis of the nanotips have …
Electronic and optical properties of titanium-doped GaN nanowires
The electronic and optical properties of titanium (Ti) doped gallium nitride (GaN) nanowires
(NWs) have been investigated using density functional theory (DFT). The donor states of …
(NWs) have been investigated using density functional theory (DFT). The donor states of …
Generally applicable self-masked dry etching technique for nanotip array fabrication
CH Hsu, HC Lo, CF Chen, CT Wu, JS Hwang, D Das… - Nano …, 2004 - ACS Publications
Well-aligned nanotip arrays were fabricated by electron cyclotron resonance (ECR) plasma
process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have …
process using gas mixtures of silane, methane, argon, and hydrogen. The resultant tips have …
Fabrication of diamond nanopillars and their arrays
YS Zou, Y Yang, WJ Zhang, YM Chong, B He… - Applied Physics …, 2008 - pubs.aip.org
High-density, uniform diamond nanopillar arrays were fabricated by employing bias-assisted
reactive ion etching in a hydrogen/argon plasma. Gold nanodots were employed as etching …
reactive ion etching in a hydrogen/argon plasma. Gold nanodots were employed as etching …
SiC-capped nanotip arrays for field emission with ultralow turn-on field
Silicon nanotips with tip diameter and height measuring 1 nm and 1 μm, respectively, and
density in the range of 10 9–3× 10 11 cm− 2, were fabricated monolithically from silicon …
density in the range of 10 9–3× 10 11 cm− 2, were fabricated monolithically from silicon …
Deep GaN etching by inductively coupled plasma and induced surface defects
J Ladroue, A Meritan, M Boufnichel… - Journal of Vacuum …, 2010 - pubs.aip.org
GaN etching was studied in Cl 2/Ar plasmas as a function of process parameters. In addition,
for a better understanding of the etching mechanisms, Langmuir probe measurements and …
for a better understanding of the etching mechanisms, Langmuir probe measurements and …
Field emission enhancement from patterned gallium nitride nanowires
Patterned gallium nitride nanowires have been grown on n-Si (100) substrates by pulsed
laser ablation. The nanowires are patterned using a physical mask, resulting in regions of …
laser ablation. The nanowires are patterned using a physical mask, resulting in regions of …
Enhanced spectral response of CIGS solar cells with anti-reflective subwavelength structures and quantum dots
A cover glass integrated with subwavelength structures (SWSs) and quantum dots (QDs)
was realized to enhance the spectral response of Cu (In 1-x Ga x) Se 2 (CIGS) thin film solar …
was realized to enhance the spectral response of Cu (In 1-x Ga x) Se 2 (CIGS) thin film solar …
GaN nanowire field emitters with the adsorption of Pt nanoparticles
We report Pt NP coated GaN NWs through CVD method and the fabrication of their field
emitters. Pt NPs are attached on the top and surfaces of GaN NWs. With the Pt NP coating, it …
emitters. Pt NPs are attached on the top and surfaces of GaN NWs. With the Pt NP coating, it …
Role of surface polarity in self-catalyzed nucleation and evolution of GaN nanostructures
Self-catalytic growth of GaN nanotips and nanoparticles, grown by chemical vapor
deposition technique, are investigated. Three important parameters, comprised of incubation …
deposition technique, are investigated. Three important parameters, comprised of incubation …