The fabrication of next-generation semiconductor devices has created a need for low-
temperature (≤ 400 C) deposition of highly-conformal (> 95%) SiO 2, SiN x, and SiC films …

Many atmospherically important chemical processes are believed to occur at the interface
between the air and aqueous phases. We report the first direct measurement of the kinetics …

We report novel molecular compound formation from silane-hydrogen mixtures with
intermolecular interactions unprecedented for hydrogen-rich solids. A complex H 2 vibron …

Microcrystalline silicon (⁠ μ c-Si: H) of superior quality can be prepared using the hot-wire
chemical-vapor deposition method (HWCVD). At a low substrate temperature (TS) of 185 C …

The structures of carbon nanotubes grown from catalytic nanoparticles via plasma-
enhanced chemical vapor deposition in CH 4/H 2 mixtures show a strong dependence on …

Atomic N and excited N 2 (N 2*) play important roles in plasma-assisted synthesis of nitride
materials, such as GaN. Absolute densities of N and N 2* were measured at the substrate …

In Titan's atmosphere consisting of N2 and CH4, large amounts of atomic hydrogen are
produced by photochemical reactions during the formation of complex organics. This atomic …

In a pure-hydrogen glow discharge plasma, the etch rate of silicon increases with increasing
temperature up to about≥ 1100 Å/s at 60–80 C and, upon a further increase of the …

We have experimentally determined the crystallization rate of plasma-produced amorphous
silicon powder undergoing in-flight thermal annealing, and have found a significant …

Using modulated beam line-of-sight threshold ionization mass spectrometry (LOS-TIMS) we
measured absolute O, O 2, and Ar densities, and the average neutral-gas temperature in an …