Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …

The discovery of ferroelectric doped HfO2 enabled the emergence of scalable and CMOS-
compatible ferroelectric field-effect transistor (FeFET) technology which has the potential to …

Hyperdimensional computing (HDC) is a brain-inspired computational framework that relies
on long hypervectors (HVs) for learning. In HDC, computational operations consist of simple …

Device applications of ferroelectrics have not only utilized the switchable polarization but
also adopted myriads of emerging physical properties. In particular, ferroelectrics in ultra …

Ferroelectric field-effect transistors (FeFETs) with a single gate structure and using the newly
discovered ferroelectric hafnium oxide as an active material are attracting considerable …

The deployment of ferroelectrics in device concepts such as Ferroelectric Random Access
Memory and Ferroelectric Field Effect Transistors requires a good understanding of the …