An overview about Si, Superjunction, SiC and GaN power MOSFET technologies in power electronics applications
This work presents a comparative analysis among four power MOSFET technologies:
conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride …
conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride …
A survey on switching oscillations in power converters
T Liu, TTY Wong, ZJ Shen - … of Emerging and Selected Topics in …, 2019 - ieeexplore.ieee.org
High-frequency power converters enabled by wide bandgap (WBG) and silicon
semiconductor devices offer distinct advantages in power density and dynamic performance …
semiconductor devices offer distinct advantages in power density and dynamic performance …
Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge
D Christen, J Biela - IEEE Transactions on Power Electronics, 2018 - ieeexplore.ieee.org
Modern wide-bandgap devices, such as SiC-or GaN-based devices, feature significantly
reduced switching losses, and the question arises if soft-switching operating modes are still …
reduced switching losses, and the question arises if soft-switching operating modes are still …
Methodology for wide band-gap device dynamic characterization
The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior
of power devices. Considering the high switching-speed capability of wide band-gap …
of power devices. Considering the high switching-speed capability of wide band-gap …
Characterization and experimental assessment of the effects of parasitic elements on the MOSFET switching performance
J Wang, HS Chung, RT Li - IEEE Transactions on Power …, 2012 - ieeexplore.ieee.org
This paper presents a comprehensive study on the influences of parasitic elements on the
MOSFET switching performance. A circuit-level analytical model that takes MOSFET …
MOSFET switching performance. A circuit-level analytical model that takes MOSFET …
Experimental parametric study of the parasitic inductance influence on MOSFET switching characteristics
This paper presents an experimental parametric study of the parasitic indu waveform
ringing, switching loss, device stress, and electromagnetic interference. Based on the results …
ringing, switching loss, device stress, and electromagnetic interference. Based on the results …
Characterization and modeling of high-switching-speed behavior of SiC active devices
Z Chen - 2009 - vtechworks.lib.vt.edu
To support the study of potential utilization of the emerging silicon carbide (SiC) devices, two
SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A …
SiC active switches, namely 1.2 kV, 5 A SiC JFET manufactured by SiCED, and 1.2 kV, 20 A …
A 50-kW high-frequency and high-efficiency SiC voltage source inverter for more electric aircraft
High power density is required for power converter in more electric aircraft due to the strict
demands of volume and weight, which makes silicon carbide (SiC) extremely attractive for …
demands of volume and weight, which makes silicon carbide (SiC) extremely attractive for …
A multiloop method for minimization of parasitic inductance in GaN-based high-frequency DC–DC converter
Gallium nitride high electron mobility transistors (GaN HEMTs) are promising switching
devices in high-efficiency and high-density dc–dc converters due to their fast switching …
devices in high-efficiency and high-density dc–dc converters due to their fast switching …
Parasitic inductance and capacitance-assisted active gate driving technique to minimize switching loss of SiC MOSFET
High di/dt and dv/dt of SiC MOSFET cause a considerable amount of overshoot in device
voltage and current during switching transients in the presence of inverter layout parasitic …
voltage and current during switching transients in the presence of inverter layout parasitic …