We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
developing Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …

Recent success in isolating and growing various two-dimensional (2D) materials with
intriguing properties has pushed forward the search for new 2D nanostructures with novel …

The layer exchange technique enables high-quality multilayer graphene (MLG) on arbitrary
substrates, which is a key to combining advanced electronic devices with carbon materials …

Layer exchange (LE) is an interesting phenomenon in which metal and semiconductor
layers exchange during heat treatment. A great deal of effort has been put into research on …

A semiconductor thin film with high carrier mobility was fabricated on a flexible film. During
the solid-phase crystallization process of the densified amorphous Ge layer, the interfacial …

High-carrier mobility semiconductors on insulators are essential for fabricating advanced
thin-film transistors, allowing for three-dimensional integrated circuits or high-performance …

To improve the performance of electronic devices, extensive research efforts have recently
focused on the effect of incorporating Sn into Ge. In the present work, we investigate how Sn …

The carrier mobility of polycrystalline Ge thin-film transistors has significantly improved in
recent years, raising hopes for the realization of next-generation electronic devices. Here …

We investigated the effects of incorporation of 0%–2% tin (Sn) into amorphous germanium
(Ge) on its crystallization behavior and electrical properties. Incorporation of only 0.2% Sn …

High-carrier-mobility semiconductors on flexible-plastic are essential to realize flexible
electronics. For this purpose, electrical properties of orientation-controlled large-grain Ge …