One of the modern methods for modifying semiconductors using beams of protons and
alpha particles is analyzed; this modification is accomplished by the controlled introduction …

Issues related to the production of radiation defects in silicon carbide of various polytypes
and with differing conductivity types and concentrations of charge carriers as a result of …

Electrical properties of silicon diodes with p+ n junctions irradiated with 197Au+ 26 swift
heavy ions (energy E= 350MeV, fluences of 107cm− 2 and 108cm− 2) and silicon diodes …

Abstract Analysis is given of the progress in the modification of semiconductors by proton
beams in fields such as proton-enhanced diffusion, ion-beam mixing, and formation of …

Characteristics of Si p+ n diodes with non-uniformly distributed compensating defects, which
were introduced by implantation with Xe23+ ions, have been studied. The layer with the …

The aim of this work is examining the influence of the number of the activation––over-
voltage pulses to the aging of over-voltage protection elements. Both non-linear (gas-filled …

The aim of the work was to investigate alfa-particle irradiation induced defects in Si SiO2
structures by means of the thermostimulated discharge currents (TSDC) analysis. The object …

Exciting the electronic subsystem of a semiconductor via photoionization or ionization by
charged particles, or, alternatively, injecting nonequilibrium charge carriers into a …

Soft X-ray (∼ 10 keV) and near ultra-violet radiation based technique for precise adjustment
of MOS devices and integrated circuit thresholds has been developed. The possibility of the …

The variation of parameters of Si-based MOS-transistors affected by combined infrared and
X-ray photons processing were presented. It was found that X-ray irradiated transistor under …