High-resolution alpha spectrometry using 4H-SiC detectors: A review of the state-of-the-art
KC Mandal, SK Chaudhuri… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Silicon Carbide (SiC) semiconductor radiation detectors were first demonstrated in 1957,
however, meaningful progress was delayed until the mid-1990s when high-quality …
however, meaningful progress was delayed until the mid-1990s when high-quality …
[HTML][HTML] Advances in high-resolution radiation detection using 4H-SiC epitaxial layer devices
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for
harsh environment application have been studied extensively and reviewed in this article …
harsh environment application have been studied extensively and reviewed in this article …
High-resolution alpha-particle spectrometry using 4H silicon carbide semiconductor detectors
FH Ruddy, JG Seidel, H Chen… - IEEE Transactions on …, 2006 - ieeexplore.ieee.org
SiC detectors with active volume dimensions sufficient to stop alpha particles have been
manufactured and tested. A linear energy response and excellent energy resolution have …
manufactured and tested. A linear energy response and excellent energy resolution have …
The fast neutron response of 4H silicon carbide semiconductor radiation detectors
FH Ruddy, AR Dulloo, JG Seidel… - … on Nuclear Science, 2006 - ieeexplore.ieee.org
Fast neutron response measurements are reported for radiation detectors based on large-
volume SiC pin diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions …
volume SiC pin diodes. Multiple reaction peaks are observed for 14-MeV neutron reactions …
Thermal stability and heat flux investigation of neutron-irradiated nanocrystalline silicon carbide (3C–SiC) using DSC spectroscopy
EM Huseynov - Ceramics International, 2020 - Elsevier
Nanocrystalline silicon carbide (3C–SiC) particles have been irradiated by neutron flux (2×
10 13 n∙ cm− 2 s− 1) up to 5 h at the TRIGA Mark II type research reactor. At the present …
10 13 n∙ cm− 2 s− 1) up to 5 h at the TRIGA Mark II type research reactor. At the present …
Radiation detection using n-type 4H-SiC epitaxial layer surface barrier detectors
SK Chaudhuri, KC Mandal - Advanced Materials for Radiation Detection, 2022 - Springer
While CdZnTe (CZT) is one of the best materials for room-temperature radiation detection,
they are not quite suitable for high-temperature or harsh-environment applications. This …
they are not quite suitable for high-temperature or harsh-environment applications. This …
[HTML][HTML] Response of 4h-sic detectors to ionizing particles
We report the response of newly designed 4H-SiC Schottky barrier diode (SBD) detector
prototype to alpha and gamma radiation. We studied detectors of three different active area …
prototype to alpha and gamma radiation. We studied detectors of three different active area …
Temperature vs. impedance dependencies of neutron-irradiated nanocrystalline silicon carbide (3C-SiC)
E Huseynov, A Jazbec, L Snoj - Applied Physics A, 2019 - Springer
At the present work, impedance spectroscopy of nanocrystalline silicon carbide (3C-SiC)
has been investigated as a function of temperature. Nanocrystalline 3C-SiC particles …
has been investigated as a function of temperature. Nanocrystalline 3C-SiC particles …
[HTML][HTML] The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm2
LY Liu, L Wang, P Jin, JL Liu, XP Zhang, L Chen… - Sensors, 2017 - mdpi.com
Silicon carbide (SiC) detectors of an Ni/4H-SiC Schottky diode structure and with sensitive
areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material …
areas of 1–4 cm2 were fabricated using high-quality lightly doped epitaxial 4H-SiC material …
[HTML][HTML] Radiation response of large-area 4H-SiC Schottky barrier diodes
We report on the effects of large-area 4H-SiC Schottky barrier diodes on the radiation
response to ionizing particles. Two different diode areas were compared: 1 mm× 1 mm and …
response to ionizing particles. Two different diode areas were compared: 1 mm× 1 mm and …