This paper presents an analytical model for the internal capacitances of short-channel ion-
implanted GaAs MESFETs under dark and illuminated conditions. The device structure …

The reduction of the conductance of GaAs FETs by a negative voltage applied to the
substrate, termed backgating or sidegating, is numerically modelled to clarify which type of …

The accelerating integration of microwave and optical components in modern optoelectronic
systems stimulates comprehensive investigations of device operation and efficiency. This …

A theoretical model to study the optical sensitivity of a metal-semiconductor field effect
transistor has been proposed for a relatively high drain field. An analytical expression of …

A simple analytical model for the optical response and sensitivity of an ion-implanted
MESFET has been developed with the presence of interface states and interfacial layer at …

An analytical of new theoretical model has been developed to study the Capacitance
characteristics for an optically controlled Gallium Arsenic Metal Semiconductor Field Effect …

For GaAs MESFET the capacitance of optically controlled short Gate–length modeled
analytically using Gaussian doped channel The photo effects on the short gate-length GaAs …

This paper presents an analytical model for CV characteristics of short gate-length GaAs
MESFET under illuminated condition. The non-analytic Gaussian doping profile commonly …

The current-voltage characteristics for optically controlled short gate-length ion-implanted
GaAs MESFET has been presented in this paper. The illumination sensitivity of the drain …

In the present paper, the internal capacitances of optically controlled short gate-length GaAs
MESFETs with vertical Gaussian doped channel region has been modeled analytically. The …